JPS57169280A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS57169280A
JPS57169280A JP5403581A JP5403581A JPS57169280A JP S57169280 A JPS57169280 A JP S57169280A JP 5403581 A JP5403581 A JP 5403581A JP 5403581 A JP5403581 A JP 5403581A JP S57169280 A JPS57169280 A JP S57169280A
Authority
JP
Japan
Prior art keywords
junction
region
type
high density
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5403581A
Other languages
Japanese (ja)
Inventor
Tsutomu Koshimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5403581A priority Critical patent/JPS57169280A/en
Publication of JPS57169280A publication Critical patent/JPS57169280A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

PURPOSE:To improve the difference in luminous intensity without varying the arrangement or pattern of an ohmic electrode, by improving the structure of a diffused region in a light emitting device. CONSTITUTION:A diffusion preventing layer 3 is formed on a compound semiconductor substrate with an N type GaAsP layer 2 vapor-grown on an N type GaP substrate 1, and P type impurity is selectively diffused to an arbitrary depth by thermal diffusion to obtain a P-N junction 4. Next, a P type high density region 7 is formed within a P side region of the P-N junction 4 by selective diffusion, and an ohmic electrode 5 is formed on the p side region or on the p side region and P type high density region 7 to obtain an ohmic contact 6. Thus, when electricity is conducted into the light emitting device in a forward direction, the current supplied from the ohmic electrode 5 flows first to the P type high density region 7 and further to the P-N junction. Therefore, the current flowing to the P-N junction becomes homogeneous with homogeneous luminous intensity.
JP5403581A 1981-04-10 1981-04-10 Compound semiconductor device Pending JPS57169280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5403581A JPS57169280A (en) 1981-04-10 1981-04-10 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5403581A JPS57169280A (en) 1981-04-10 1981-04-10 Compound semiconductor device

Publications (1)

Publication Number Publication Date
JPS57169280A true JPS57169280A (en) 1982-10-18

Family

ID=12959325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5403581A Pending JPS57169280A (en) 1981-04-10 1981-04-10 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57169280A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608049U (en) * 1983-06-27 1985-01-21 株式会社リコー LED array light source

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116190A (en) * 1974-02-25 1975-09-11
JPS531197A (en) * 1976-05-24 1978-01-07 Hooker Chemicals Plastics Corp Manufacturing method of chlorine dioxide

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116190A (en) * 1974-02-25 1975-09-11
JPS531197A (en) * 1976-05-24 1978-01-07 Hooker Chemicals Plastics Corp Manufacturing method of chlorine dioxide

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS608049U (en) * 1983-06-27 1985-01-21 株式会社リコー LED array light source
JPH0318193Y2 (en) * 1983-06-27 1991-04-17

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