JPS55154793A - Semiconductor laser element - Google Patents

Semiconductor laser element

Info

Publication number
JPS55154793A
JPS55154793A JP6468579A JP6468579A JPS55154793A JP S55154793 A JPS55154793 A JP S55154793A JP 6468579 A JP6468579 A JP 6468579A JP 6468579 A JP6468579 A JP 6468579A JP S55154793 A JPS55154793 A JP S55154793A
Authority
JP
Japan
Prior art keywords
layer
type
mesa
laser element
stripe
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6468579A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Yukio Kurata
Kaneki Matsui
Toshio Hayakawa
Morichika Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6468579A priority Critical patent/JPS55154793A/en
Publication of JPS55154793A publication Critical patent/JPS55154793A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H01S5/2234—Buried stripe structure with inner confining structure between the active layer and the lower electrode having a structured substrate surface

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To eliminate the variation of gain distribution in a semiconductor laser element by forming a thick waveguide structure in a stripe provided with an active layer forming the laser element to thereby prevent the spread of the lateral mode and to suppress the expansion of the injection current out of the stripe structure. CONSTITUTION:There are sequentially coated on an N-type GaAs substrate 1 having 2 stripe state mesa groove 10 at the center an N-type Ga1-yAlyAs layer 2, an N-type Ga1-xAlxAs layer 3 becoming an active layer, a P-type Ga1-xAlxAs layer 4 under the condition of 0<=x<y<1 and an N-type GaAs layer 14, and Zn is diffused partly in the surface layer of the layer 14 to convert to P-type only in this portion. Then, a P<+>-type GaAs layer 15 is coated as including Zn on the entire surface including the P-type portion, a P-type electrode 7 is mounted thereat, and an N- type electrode 8 is mounted on the back surface of the substrate 1. In this manner, a thick region 9 of active layer 3 is formed in the mesa groove 10, and Zn in the layer 15 is diffused to reach the layer 4 in the striped mesa 13 corresponding to the mesa groove 10. Thus, the portion except the mesa 13 inhibits to flow an electric current therethrough.
JP6468579A 1979-05-22 1979-05-22 Semiconductor laser element Pending JPS55154793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6468579A JPS55154793A (en) 1979-05-22 1979-05-22 Semiconductor laser element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6468579A JPS55154793A (en) 1979-05-22 1979-05-22 Semiconductor laser element

Publications (1)

Publication Number Publication Date
JPS55154793A true JPS55154793A (en) 1980-12-02

Family

ID=13265249

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6468579A Pending JPS55154793A (en) 1979-05-22 1979-05-22 Semiconductor laser element

Country Status (1)

Country Link
JP (1) JPS55154793A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328393A2 (en) * 1988-02-09 1989-08-16 Kabushiki Kaisha Toshiba Semiconductor laser device and the manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328393A2 (en) * 1988-02-09 1989-08-16 Kabushiki Kaisha Toshiba Semiconductor laser device and the manufacturing method thereof

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