JPS5728371A - Multicolored light emitting semiconductor device and its manufacture - Google Patents
Multicolored light emitting semiconductor device and its manufactureInfo
- Publication number
- JPS5728371A JPS5728371A JP10289480A JP10289480A JPS5728371A JP S5728371 A JPS5728371 A JP S5728371A JP 10289480 A JP10289480 A JP 10289480A JP 10289480 A JP10289480 A JP 10289480A JP S5728371 A JPS5728371 A JP S5728371A
- Authority
- JP
- Japan
- Prior art keywords
- type
- junction
- layer
- substrate
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 239000003086 colorant Substances 0.000 abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To radiate two colors of red and a color except red simultaneously by a method wherein N type and P type CaAl As layers are grown on an N type CaAs substrate and the first P-N junction is formed, one part of the substrate is removed, the second P-N junction section is shaped to the exposed N type CaAl As layer, and colors are formed in the N type CaAlAs surface direction. CONSTITUTION:The N type GaAs substrate 13 is prepared, and liquid-phase epitaxial growth is conducted by using a solution obtained by containing a very samll amount of Si an a melted solution of Ga and Al. In this case, the N type GaxAl1-x As layer 14 is grown at a high temperature first, the P type GaxAl1-x As layer 15 is shaped at a low temperature, and the first P-N junction 16 is formed at an interface. The back of the substrate 13 is etched selectively and the back of the layer 14 is exposed at the central section Zn is diffused to the back and a P type region 17 is molded, and the second P-N junction 19 is formed between the region 17 and the layer 14. Electrodes 20-22 are each attached onto the layer 15, the back of the substrate 13 and the region 17, and infrared light is emitted from the junction 16 and red light from the junction 19 respectively by applying voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289480A JPS5728371A (en) | 1980-07-26 | 1980-07-26 | Multicolored light emitting semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10289480A JPS5728371A (en) | 1980-07-26 | 1980-07-26 | Multicolored light emitting semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5728371A true JPS5728371A (en) | 1982-02-16 |
Family
ID=14339562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10289480A Pending JPS5728371A (en) | 1980-07-26 | 1980-07-26 | Multicolored light emitting semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5728371A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62288137A (en) * | 1986-05-28 | 1987-12-15 | フアイザ−，インコ−ポレ−テツド | Alkali-resistant glass fiber |
| EP0420695A2 (en) * | 1989-09-29 | 1991-04-03 | Shin-Etsu Handotai Company Limited | Multiple wavelength light emitting device |
-
1980
- 1980-07-26 JP JP10289480A patent/JPS5728371A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62288137A (en) * | 1986-05-28 | 1987-12-15 | フアイザ−，インコ−ポレ−テツド | Alkali-resistant glass fiber |
| EP0420695A2 (en) * | 1989-09-29 | 1991-04-03 | Shin-Etsu Handotai Company Limited | Multiple wavelength light emitting device |
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