JPS56111277A - Luminous semiconductor device - Google Patents

Luminous semiconductor device

Info

Publication number
JPS56111277A
JPS56111277A JP1450680A JP1450680A JPS56111277A JP S56111277 A JPS56111277 A JP S56111277A JP 1450680 A JP1450680 A JP 1450680A JP 1450680 A JP1450680 A JP 1450680A JP S56111277 A JPS56111277 A JP S56111277A
Authority
JP
Japan
Prior art keywords
layer
type
substrate
luminous
carrier density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1450680A
Other languages
Japanese (ja)
Other versions
JPS6158992B2 (en
Inventor
Junichi Nishizawa
Toru Tejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Stanley Electric Co Ltd
Original Assignee
Semiconductor Research Foundation
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation, Stanley Electric Co Ltd filed Critical Semiconductor Research Foundation
Priority to JP1450680A priority Critical patent/JPS56111277A/en
Priority to GB8103499A priority patent/GB2070859B/en
Priority to FR8102426A priority patent/FR2475803B1/en
Priority to DE19813104082 priority patent/DE3104082A1/en
Priority to US06/232,967 priority patent/US4414558A/en
Publication of JPS56111277A publication Critical patent/JPS56111277A/en
Publication of JPS6158992B2 publication Critical patent/JPS6158992B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce misfit in heterojunction and raise the luminous efficiency by specifying the kind of impurity in a substrate and the carrier density in each layer when a P type GaAlAs layer serving as a luminous part and an N type GaAlAs layer are laminated to form a luminous diode on the P type GaAs substrate. CONSTITUTION:The P type Ga1-xAlxAs layer 2 serving as a luminous part and the N type Ga1-yAlyAs layer 3 are laminated and grown epitaxially on the P type GaAs substrate 1, and the PN heterojunction 6 is caused on the boundary between the layers 2 and 3. The luminous diode is constituted in this way and an electrode 4 is fitted on the whole back surface of the substrate 1, while an electrode 5 is fitted in the central part of the surface of the layer 3. In such a constitution, Zn is used as the impurity in the substrate 1 and the carrier densities of the layer 2 and the layer 3 are specified to be 4.5X10<17>cm<-3p<2.5X10<18>cm<-3>, where (P) is the carrier density of the layer, and 2X10<17>cm-3<n<1X10<18>cm-3, where (n) is the carrier density of the layer 3. Moreover, the relation of (x) to (y) is set to be x<y and (x) is selected in the range within 0.3<x<0.4.
JP1450680A 1980-02-07 1980-02-07 Luminous semiconductor device Granted JPS56111277A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1450680A JPS56111277A (en) 1980-02-07 1980-02-07 Luminous semiconductor device
GB8103499A GB2070859B (en) 1980-02-07 1981-02-05 Hetero-junction light-emitting diode
FR8102426A FR2475803B1 (en) 1980-02-07 1981-02-06 HETERO-JUNCTION LIGHT EMITTING DIODE
DE19813104082 DE3104082A1 (en) 1980-02-07 1981-02-06 Light-emitting heterojunction diode
US06/232,967 US4414558A (en) 1980-02-07 1981-02-09 Hetero-junction light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1450680A JPS56111277A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Publications (2)

Publication Number Publication Date
JPS56111277A true JPS56111277A (en) 1981-09-02
JPS6158992B2 JPS6158992B2 (en) 1986-12-13

Family

ID=11862946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1450680A Granted JPS56111277A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111277A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

Also Published As

Publication number Publication date
JPS6158992B2 (en) 1986-12-13

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