GB1503678A - Semiconductor electroluminescent devices and their manufacture - Google Patents
Semiconductor electroluminescent devices and their manufactureInfo
- Publication number
- GB1503678A GB1503678A GB18958/75A GB1895875A GB1503678A GB 1503678 A GB1503678 A GB 1503678A GB 18958/75 A GB18958/75 A GB 18958/75A GB 1895875 A GB1895875 A GB 1895875A GB 1503678 A GB1503678 A GB 1503678A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- region
- doped
- epitaxial layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
1503678 Light-emitting diodes PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 6 May 1975 [9 May 1974] 18958/75 Heading H1K A light-emitting diode comprises an epitaxial layer 32 on a substrate 31 of the same conductivity type but of a material having a smaller forbidden bandwidth, and a region 33, 34 of the opposite conductivity type selectively diffused into a localized area of the layer 32 and extending down beyond the interface with the substrate 31. Radiative recombination is confined to the portion 34 of the diffused region which is within the substrate 31. As shown a further diffused zone 35 shallower than, but of larger peripheral extent and high doping than, the region 33, 34 may be provided to facilitate contact-making. Alternatively the zone 35 may be annular not extending over the surface of the region 33, 34. The substrate 31 may be of Sidoped GaAs while the epitaxial layer 32 may be of Se or Te-doped Ga 1-x Al x As (0À05<x<0À4). Zn is the preferred diffusant for the region 33, 34. The substrate may itself comprise an epitaxial layer of S-doped Gq 1-y Al y As (0À1<y< 0À2) on a Si-doped GaAs substrate of the same conductivity type, the upper epitaxial layer then being of S-doped Ga 1-x Al x As (0À2<x<0À4).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7416054A FR2270753B1 (en) | 1974-05-09 | 1974-05-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1503678A true GB1503678A (en) | 1978-03-15 |
Family
ID=9138632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB18958/75A Expired GB1503678A (en) | 1974-05-09 | 1975-05-06 | Semiconductor electroluminescent devices and their manufacture |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS50159688A (en) |
| CA (1) | CA1043894A (en) |
| DE (1) | DE2520061C2 (en) |
| FR (1) | FR2270753B1 (en) |
| GB (1) | GB1503678A (en) |
| IT (1) | IT1037913B (en) |
| NL (1) | NL7505276A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2376513A1 (en) * | 1976-12-31 | 1978-07-28 | Radiotechnique Compelec | SEMICONDUCTOR DEVICE EQUIPPED WITH A PROTECTIVE FILM |
| GB1569369A (en) * | 1977-04-01 | 1980-06-11 | Standard Telephones Cables Ltd | Injection lasers |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS502235B1 (en) * | 1970-09-07 | 1975-01-24 | ||
| FR2119176A5 (en) * | 1970-12-23 | 1972-08-04 | Radiotechnique Compelec | Monolithic semiconductor body - comprising binary cpd substrate and active layer of a ternary cpd |
-
1974
- 1974-05-09 FR FR7416054A patent/FR2270753B1/fr not_active Expired
-
1975
- 1975-05-02 CA CA226,180A patent/CA1043894A/en not_active Expired
- 1975-05-06 IT IT23083/75A patent/IT1037913B/en active
- 1975-05-06 NL NL7505276A patent/NL7505276A/en not_active Application Discontinuation
- 1975-05-06 DE DE2520061A patent/DE2520061C2/en not_active Expired
- 1975-05-06 GB GB18958/75A patent/GB1503678A/en not_active Expired
- 1975-05-08 JP JP5535475A patent/JPS50159688A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IT1037913B (en) | 1979-11-20 |
| FR2270753B1 (en) | 1977-10-21 |
| DE2520061A1 (en) | 1975-11-20 |
| NL7505276A (en) | 1975-11-11 |
| FR2270753A1 (en) | 1975-12-05 |
| DE2520061C2 (en) | 1983-12-08 |
| CA1043894A (en) | 1978-12-05 |
| JPS50159688A (en) | 1975-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |