JPS57193081A - Visible light emitting semiconductor device - Google Patents

Visible light emitting semiconductor device

Info

Publication number
JPS57193081A
JPS57193081A JP7775881A JP7775881A JPS57193081A JP S57193081 A JPS57193081 A JP S57193081A JP 7775881 A JP7775881 A JP 7775881A JP 7775881 A JP7775881 A JP 7775881A JP S57193081 A JPS57193081 A JP S57193081A
Authority
JP
Japan
Prior art keywords
layer
type
light emitting
semiconductor device
visible light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7775881A
Other languages
Japanese (ja)
Inventor
Tetsuo Sekiwa
Yoshio Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7775881A priority Critical patent/JPS57193081A/en
Publication of JPS57193081A publication Critical patent/JPS57193081A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To enhance the light emitting efficiency and the reproducibility of a visible light emitting semiconductor device by reducing the carrier density of a p type layer lower than that of an n type layer when forming the device by alternately epitaxially growing an n type GaAlAs layer and a p type GaAlAs layer of Zn impurity on a crystalline substrate. CONSTITUTION:An n<+> type GaAlAs layer 12 doped with Te in high density is epitaxially grown on an n-type GaAlAs substrate 11, and a p<-> type GaAlAs layer 13 doped with Zn of low density is epitaxially grown on the layer 12 and is epitaxially grown. In this structure, the carrier desity of the layer 12 is set to 9X10<17>cm<-3>, and the carrier density of the layer 13 is set to 1-2X10<17>cm<-3>. In this manner, the difference between the p type carrier density and the n type carrier density is sufficiently increased in the vicinity of the p-n junction, thereby obtaining high light emitting efficiency.
JP7775881A 1981-05-22 1981-05-22 Visible light emitting semiconductor device Pending JPS57193081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7775881A JPS57193081A (en) 1981-05-22 1981-05-22 Visible light emitting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7775881A JPS57193081A (en) 1981-05-22 1981-05-22 Visible light emitting semiconductor device

Publications (1)

Publication Number Publication Date
JPS57193081A true JPS57193081A (en) 1982-11-27

Family

ID=13642821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7775881A Pending JPS57193081A (en) 1981-05-22 1981-05-22 Visible light emitting semiconductor device

Country Status (1)

Country Link
JP (1) JPS57193081A (en)

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