JPS57183080A - Light emission diode - Google Patents

Light emission diode

Info

Publication number
JPS57183080A
JPS57183080A JP6790481A JP6790481A JPS57183080A JP S57183080 A JPS57183080 A JP S57183080A JP 6790481 A JP6790481 A JP 6790481A JP 6790481 A JP6790481 A JP 6790481A JP S57183080 A JPS57183080 A JP S57183080A
Authority
JP
Japan
Prior art keywords
type
layer
light emission
density
doner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6790481A
Other languages
Japanese (ja)
Inventor
Yoshio Iizuka
Tetsuo Sekiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6790481A priority Critical patent/JPS57183080A/en
Publication of JPS57183080A publication Critical patent/JPS57183080A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain stable light emission characteristics by keeping the value NA/ND within the specified range where NA means density of accepter of a p type epitaxial gowth layer and ND means density of doner of an n type epitaxial growth layer. CONSTITUTION:An n type layer, for instance an n type GaxAl1-xAs layer 2 doped by tellurium, and a p type layer, for instance a p type GayAl1-yAs layer 3 doped by Zn are formed on an n type GaAs single crystal substrate 1. As shown in Figure, in both cases when density of doner ND is 5X10<16>cm<-3> and 2X 10<17>cm<-3>, the emission power takes the maximum value when NA/ND is approximately 2-4. Moreover, even NA/ND varies within the range of 1.5-10, there is not problem practically and the stable light emission characterisics can be obtained.
JP6790481A 1981-05-06 1981-05-06 Light emission diode Pending JPS57183080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6790481A JPS57183080A (en) 1981-05-06 1981-05-06 Light emission diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6790481A JPS57183080A (en) 1981-05-06 1981-05-06 Light emission diode

Publications (1)

Publication Number Publication Date
JPS57183080A true JPS57183080A (en) 1982-11-11

Family

ID=13358342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6790481A Pending JPS57183080A (en) 1981-05-06 1981-05-06 Light emission diode

Country Status (1)

Country Link
JP (1) JPS57183080A (en)

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