JPS5479579A - Manufacture of gap green light emission diode - Google Patents
Manufacture of gap green light emission diodeInfo
- Publication number
- JPS5479579A JPS5479579A JP14836677A JP14836677A JPS5479579A JP S5479579 A JPS5479579 A JP S5479579A JP 14836677 A JP14836677 A JP 14836677A JP 14836677 A JP14836677 A JP 14836677A JP S5479579 A JPS5479579 A JP S5479579A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type gaas
- gap
- manufacture
- light emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To improve luminescence efficiency by obtaining a grown layer which contains N2 at a high density by eliminating crater-shaped abnormal growth by using Ar gas containing NH3 as carrier gas when fulfilling the liquid-crystal epitaxsial growth of a GaP layer on a GaP substrate.
CONSTITUTION: On N-type GaAs substrate 1, N-type GaAs layer 2 and P-type GaAs layer 3 are stacked and their liquid-crystal epitaxial growth is implemented. At this time, carrier impurities employ S for layer 2 and Zn for layer 3, but it is also recommended to dope only layer 2 with N2 taking the lead in luminescence or to dope both layers 2 and 3. As the gas carrying those impurities, Ar gas containing N2 is employed and the process is so set that N2 will be contained in the grown layer at approximate 5×1018/cm3. Consequently, the surface is flattened and luminescence efficiency also reaches approximate 0.15%.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52148366A JPS6042611B2 (en) | 1977-12-07 | 1977-12-07 | Method for manufacturing GaP green light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52148366A JPS6042611B2 (en) | 1977-12-07 | 1977-12-07 | Method for manufacturing GaP green light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5479579A true JPS5479579A (en) | 1979-06-25 |
JPS6042611B2 JPS6042611B2 (en) | 1985-09-24 |
Family
ID=15451149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52148366A Expired JPS6042611B2 (en) | 1977-12-07 | 1977-12-07 | Method for manufacturing GaP green light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6042611B2 (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49113590A (en) * | 1973-02-26 | 1974-10-30 | ||
JPS5072880A (en) * | 1973-10-31 | 1975-06-16 | ||
JPS5271388A (en) * | 1975-12-11 | 1977-06-14 | Mitsubishi Electric Corp | Liquid phase epitaxial gorwth method |
-
1977
- 1977-12-07 JP JP52148366A patent/JPS6042611B2/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49113590A (en) * | 1973-02-26 | 1974-10-30 | ||
JPS5072880A (en) * | 1973-10-31 | 1975-06-16 | ||
JPS5271388A (en) * | 1975-12-11 | 1977-06-14 | Mitsubishi Electric Corp | Liquid phase epitaxial gorwth method |
Also Published As
Publication number | Publication date |
---|---|
JPS6042611B2 (en) | 1985-09-24 |
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