JPS5479579A - Manufacture of gap green light emission diode - Google Patents

Manufacture of gap green light emission diode

Info

Publication number
JPS5479579A
JPS5479579A JP14836677A JP14836677A JPS5479579A JP S5479579 A JPS5479579 A JP S5479579A JP 14836677 A JP14836677 A JP 14836677A JP 14836677 A JP14836677 A JP 14836677A JP S5479579 A JPS5479579 A JP S5479579A
Authority
JP
Japan
Prior art keywords
layer
type gaas
gap
manufacture
light emission
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14836677A
Other languages
Japanese (ja)
Other versions
JPS6042611B2 (en
Inventor
Takao Yamaguchi
Tatsuhiko Niina
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP52148366A priority Critical patent/JPS6042611B2/en
Publication of JPS5479579A publication Critical patent/JPS5479579A/en
Publication of JPS6042611B2 publication Critical patent/JPS6042611B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To improve luminescence efficiency by obtaining a grown layer which contains N2 at a high density by eliminating crater-shaped abnormal growth by using Ar gas containing NH3 as carrier gas when fulfilling the liquid-crystal epitaxsial growth of a GaP layer on a GaP substrate.
CONSTITUTION: On N-type GaAs substrate 1, N-type GaAs layer 2 and P-type GaAs layer 3 are stacked and their liquid-crystal epitaxial growth is implemented. At this time, carrier impurities employ S for layer 2 and Zn for layer 3, but it is also recommended to dope only layer 2 with N2 taking the lead in luminescence or to dope both layers 2 and 3. As the gas carrying those impurities, Ar gas containing N2 is employed and the process is so set that N2 will be contained in the grown layer at approximate 5×1018/cm3. Consequently, the surface is flattened and luminescence efficiency also reaches approximate 0.15%.
COPYRIGHT: (C)1979,JPO&Japio
JP52148366A 1977-12-07 1977-12-07 Method for manufacturing GaP green light emitting diode Expired JPS6042611B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52148366A JPS6042611B2 (en) 1977-12-07 1977-12-07 Method for manufacturing GaP green light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52148366A JPS6042611B2 (en) 1977-12-07 1977-12-07 Method for manufacturing GaP green light emitting diode

Publications (2)

Publication Number Publication Date
JPS5479579A true JPS5479579A (en) 1979-06-25
JPS6042611B2 JPS6042611B2 (en) 1985-09-24

Family

ID=15451149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52148366A Expired JPS6042611B2 (en) 1977-12-07 1977-12-07 Method for manufacturing GaP green light emitting diode

Country Status (1)

Country Link
JP (1) JPS6042611B2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49113590A (en) * 1973-02-26 1974-10-30
JPS5072880A (en) * 1973-10-31 1975-06-16
JPS5271388A (en) * 1975-12-11 1977-06-14 Mitsubishi Electric Corp Liquid phase epitaxial gorwth method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49113590A (en) * 1973-02-26 1974-10-30
JPS5072880A (en) * 1973-10-31 1975-06-16
JPS5271388A (en) * 1975-12-11 1977-06-14 Mitsubishi Electric Corp Liquid phase epitaxial gorwth method

Also Published As

Publication number Publication date
JPS6042611B2 (en) 1985-09-24

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