JPS55103779A - Manufacture of light-emitting diode - Google Patents
Manufacture of light-emitting diodeInfo
- Publication number
- JPS55103779A JPS55103779A JP1168479A JP1168479A JPS55103779A JP S55103779 A JPS55103779 A JP S55103779A JP 1168479 A JP1168479 A JP 1168479A JP 1168479 A JP1168479 A JP 1168479A JP S55103779 A JPS55103779 A JP S55103779A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- type epitaxial
- type
- electrode
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To prevent the separation of the Zn-O pair, increase the luminance and improve the forward characteristics by forming a p+-type epitaxial layer containing Zn only on top of the epitaxial layer, containing Zn and O as impurities, formed on an n-type GaP substrate.
CONSTITUTION: High concentration p-type epitaxial layer 3, which does not contain O, is formed on p-type epitaxial layer 2, containing Zn and O as impurities, formed on n-type GaP substrate 1. 4 represents an electrode. In this structure, the ohmic characteristic of electrode 4 fitted to p-type epitaxial layer 3 becomes extremely good. Since the spreading resistance of the electrode drops and the resistance component of the entire p region is reduced, it is possible to prevent the forward voltage from increasing. Further, the emission of red light is operated in the p-type epitaxial layer, the desired luminance can be maintained. Moreover, since the p+-type epitaxial layer does not contain oxygen, it has a better crystalline characteristic than the p-type epitaxial layer, no non-light-emitting center is brought in due to the influence of external stress or impurity diffusion, and no luminance deterioration occurs.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1168479A JPS55103779A (en) | 1979-02-02 | 1979-02-02 | Manufacture of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1168479A JPS55103779A (en) | 1979-02-02 | 1979-02-02 | Manufacture of light-emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55103779A true JPS55103779A (en) | 1980-08-08 |
Family
ID=11784829
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1168479A Pending JPS55103779A (en) | 1979-02-02 | 1979-02-02 | Manufacture of light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55103779A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58108589U (en) * | 1982-01-14 | 1983-07-23 | 日本自動販売株式会社 | beverage vending machine |
| US5349208A (en) * | 1992-11-07 | 1994-09-20 | Shin Etsu Handotai Kabushiki Kaisha | GaP light emitting element substrate with oxygen doped buffer |
| EP0620601A3 (en) * | 1993-04-12 | 1995-04-19 | Shinetsu Handotai Kk | A GaP red light emitting element substrate and methods of manufacturing it. |
-
1979
- 1979-02-02 JP JP1168479A patent/JPS55103779A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58108589U (en) * | 1982-01-14 | 1983-07-23 | 日本自動販売株式会社 | beverage vending machine |
| US5349208A (en) * | 1992-11-07 | 1994-09-20 | Shin Etsu Handotai Kabushiki Kaisha | GaP light emitting element substrate with oxygen doped buffer |
| EP0620601A3 (en) * | 1993-04-12 | 1995-04-19 | Shinetsu Handotai Kk | A GaP red light emitting element substrate and methods of manufacturing it. |
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