JPS5451493A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS5451493A
JPS5451493A JP11802277A JP11802277A JPS5451493A JP S5451493 A JPS5451493 A JP S5451493A JP 11802277 A JP11802277 A JP 11802277A JP 11802277 A JP11802277 A JP 11802277A JP S5451493 A JPS5451493 A JP S5451493A
Authority
JP
Japan
Prior art keywords
layer
type
light
light emitting
type gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11802277A
Other languages
Japanese (ja)
Inventor
Motoyuki Yamamoto
Yutaka Uematsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11802277A priority Critical patent/JPS5451493A/en
Publication of JPS5451493A publication Critical patent/JPS5451493A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To reduce the number of impurity diffusion by forming the light emission region with crystal growing and to increase the light emission efficiency by taking sufficient current narrowing.
CONSTITUTION: The N type GaAs substrate 21 is gradually cooled in the speed of 0.2°C/min at 850°C of initial crystal growing temperature, and while keeping x=0.7, the N type GaAl1-xAs layer 22 being the light enclosing layer and the P type GaAs layer 23 being the light emitting layer are sequentially grown. Further, the P type GaAl1-xAs layer 24 being the light enclosing layer, N type GaxAl1-xAs layer 25, P type GaxAl1-xAs layer 26, and P type GaAs layer 27 at the uppermost layer are grown with lamination. Next, the opening 28 reaching the layer 26 is made at a part of the layer 27, Zn is diffused uniformly, and the region 32 having the diffusion boundary in the layer 27 for upper the hole 28 and reaching the layer 24 through the layer 25 under the hole 28 is formed. Thus, Au-Zn P side electrode 30 is attached to the layer 27 and Sn-Ag-Au N side electrode 31 are attached at the back of the substrate 21
COPYRIGHT: (C)1979,JPO&Japio
JP11802277A 1977-09-30 1977-09-30 Semiconductor light emitting device Pending JPS5451493A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11802277A JPS5451493A (en) 1977-09-30 1977-09-30 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11802277A JPS5451493A (en) 1977-09-30 1977-09-30 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS5451493A true JPS5451493A (en) 1979-04-23

Family

ID=14726121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11802277A Pending JPS5451493A (en) 1977-09-30 1977-09-30 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS5451493A (en)

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