JPS5451493A - Semiconductor light emitting device - Google Patents
Semiconductor light emitting deviceInfo
- Publication number
- JPS5451493A JPS5451493A JP11802277A JP11802277A JPS5451493A JP S5451493 A JPS5451493 A JP S5451493A JP 11802277 A JP11802277 A JP 11802277A JP 11802277 A JP11802277 A JP 11802277A JP S5451493 A JPS5451493 A JP S5451493A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- light
- light emitting
- type gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To reduce the number of impurity diffusion by forming the light emission region with crystal growing and to increase the light emission efficiency by taking sufficient current narrowing.
CONSTITUTION: The N type GaAs substrate 21 is gradually cooled in the speed of 0.2°C/min at 850°C of initial crystal growing temperature, and while keeping x=0.7, the N type GaAl1-xAs layer 22 being the light enclosing layer and the P type GaAs layer 23 being the light emitting layer are sequentially grown. Further, the P type GaAl1-xAs layer 24 being the light enclosing layer, N type GaxAl1-xAs layer 25, P type GaxAl1-xAs layer 26, and P type GaAs layer 27 at the uppermost layer are grown with lamination. Next, the opening 28 reaching the layer 26 is made at a part of the layer 27, Zn is diffused uniformly, and the region 32 having the diffusion boundary in the layer 27 for upper the hole 28 and reaching the layer 24 through the layer 25 under the hole 28 is formed. Thus, Au-Zn P side electrode 30 is attached to the layer 27 and Sn-Ag-Au N side electrode 31 are attached at the back of the substrate 21
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11802277A JPS5451493A (en) | 1977-09-30 | 1977-09-30 | Semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11802277A JPS5451493A (en) | 1977-09-30 | 1977-09-30 | Semiconductor light emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5451493A true JPS5451493A (en) | 1979-04-23 |
Family
ID=14726121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11802277A Pending JPS5451493A (en) | 1977-09-30 | 1977-09-30 | Semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5451493A (en) |
-
1977
- 1977-09-30 JP JP11802277A patent/JPS5451493A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS54152878A (en) | Structure of semiconductor laser element and its manufacture | |
JPS5451493A (en) | Semiconductor light emitting device | |
JPS5453975A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS5453974A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS55124280A (en) | Method of fabricating light emitting diode | |
JPS561528A (en) | Manufacture of epitaxial wafer of 3-5 group compound semiconductor | |
JPS5453977A (en) | Manufacture for gallium phosphide green light emitting element | |
JPS5418691A (en) | Manufacture of pn-junction type light emitting diode | |
JPS5588381A (en) | Preparation of gallium phosphide red light-emitting diode | |
JPS55107281A (en) | Microregion luminous diode | |
JPS5574195A (en) | Manufacturing semiconductor laser | |
JPS55103779A (en) | Manufacture of light-emitting diode | |
JPS5394778A (en) | Manufacture of semiconductor device | |
JPS5479579A (en) | Manufacture of gap green light emission diode | |
JPS5453978A (en) | Gallium phosphide green light emitting element | |
JPS5423391A (en) | Gallium-arsenic semiconductor element | |
JPS56157077A (en) | Semiconductor light emitting device | |
JPS5696881A (en) | Light emitting diode | |
JPS6442879A (en) | Manufacture of semiconductor light-emitting element | |
JPS5453976A (en) | Gallium phosphide green light emitting element | |
Zotova et al. | Parameters of the luminescence emitted by epitaxial films and p-n structures based on In sub 1 sub- sub x Ga sub x As(0< x< 0. 23) | |
JPS54117692A (en) | Semiconductor light emitting diode | |
JPS56111275A (en) | Luminous semiconductor device | |
JPH04168773A (en) | Semiconductor light emitting element | |
JPS5731184A (en) | Semiconductor light-emitting element and manufacture thereof |