JPS57183079A - Gallium phosphate multi-color light emission diode - Google Patents
Gallium phosphate multi-color light emission diodeInfo
- Publication number
- JPS57183079A JPS57183079A JP6745581A JP6745581A JPS57183079A JP S57183079 A JPS57183079 A JP S57183079A JP 6745581 A JP6745581 A JP 6745581A JP 6745581 A JP6745581 A JP 6745581A JP S57183079 A JPS57183079 A JP S57183079A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- molten liquid
- gallium phosphate
- type
- line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To make a P-layer containing oxygen exist for from P-N junction of green emission and obtain high luminace emission in the short wave length side by forming the first P type layer which contains oxygen, the first N type layer which contains phosphorus and the second N type layer which contains nitrogen and the second P type layer on a P type gallium phosphate substrate successively. CONSTITUTION:A P type gallium phosphate substrate 1 is cooled down 12 at the rate of 3 deg.C/min from 1,000 deg.C by molten liquid which contains Ga2O3 and the first P-layer 2 is made grown. Likewise, the first N-layer 3 is formed by epitaxial gowth as shown by the line 13 using molten liquid which contains phosphorus. Then using molten liquid which contains the molten liquid bubbled by ammonia and zinc, the second N-layer 4 is grown by cooling process as shown by line 14 and the second P-layer 5 is mode grow by successive cooling process as shown by line 15 without changing the equipment. The green light emission of the LED thus composed is shifted to the short wave length side and the luminance can be increased significantly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6745581A JPS57183079A (en) | 1981-05-02 | 1981-05-02 | Gallium phosphate multi-color light emission diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6745581A JPS57183079A (en) | 1981-05-02 | 1981-05-02 | Gallium phosphate multi-color light emission diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57183079A true JPS57183079A (en) | 1982-11-11 |
Family
ID=13345423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6745581A Pending JPS57183079A (en) | 1981-05-02 | 1981-05-02 | Gallium phosphate multi-color light emission diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57183079A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148873A (en) * | 1985-12-23 | 1987-07-02 | Nec Corp | Radar equipment |
-
1981
- 1981-05-02 JP JP6745581A patent/JPS57183079A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62148873A (en) * | 1985-12-23 | 1987-07-02 | Nec Corp | Radar equipment |
| JPH0521513B2 (en) * | 1985-12-23 | 1993-03-24 | Nippon Electric Co |
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