JPS5685879A - Gap green light emitting diode - Google Patents
Gap green light emitting diodeInfo
- Publication number
- JPS5685879A JPS5685879A JP16270179A JP16270179A JPS5685879A JP S5685879 A JPS5685879 A JP S5685879A JP 16270179 A JP16270179 A JP 16270179A JP 16270179 A JP16270179 A JP 16270179A JP S5685879 A JPS5685879 A JP S5685879A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- gap
- type gap
- light emitting
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a GaP green LED having high light emission efficiency by accumulating an N type GaP epitaxial grown layer having a thickness of approx. 15mum on an N type GaP monocrystalline substrate. CONSTITUTION:A boat 11 is filled in an epitaxial growth furnace, and the furnace is heated to 1,000 deg.C while feeding H2 gas thereto. Thereafter, a slider 12 is operated, and Ga solution 13 is adhered in a predetermined thickness on a semiconductor substrate 16. Subsequently, the furnace temperature is decreased to 950 deg.C, and an Si-doped N type GaP epitaxially grown layer 2 is formed on the substrate 16. Atmospheric gas is exchanged from the H2 to (Ar+NH3) gas after a predetermined time, is cooled to 900 deg.C, and N-doped P type GaP epitaxially grown layer 4 is accuuated in approx. 15mum. The atmospheric gas is then exchanged to Zn gas, is retained to 900 deg.C for a predetermined time, is then decreased to 800 deg.C, and the layer 4 is grown. Thus, a GaP green LED having perferable light emitting ef ficiency can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16270179A JPS5685879A (en) | 1979-12-17 | 1979-12-17 | Gap green light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16270179A JPS5685879A (en) | 1979-12-17 | 1979-12-17 | Gap green light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5685879A true JPS5685879A (en) | 1981-07-13 |
Family
ID=15759652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16270179A Pending JPS5685879A (en) | 1979-12-17 | 1979-12-17 | Gap green light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685879A (en) |
-
1979
- 1979-12-17 JP JP16270179A patent/JPS5685879A/en active Pending
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