JPS561529A - Manufacture of epitaxial wafer of 3-5 group compound semiconductor - Google Patents

Manufacture of epitaxial wafer of 3-5 group compound semiconductor

Info

Publication number
JPS561529A
JPS561529A JP7568179A JP7568179A JPS561529A JP S561529 A JPS561529 A JP S561529A JP 7568179 A JP7568179 A JP 7568179A JP 7568179 A JP7568179 A JP 7568179A JP S561529 A JPS561529 A JP S561529A
Authority
JP
Japan
Prior art keywords
layer
substrate
cooling
gap
molten liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7568179A
Other languages
Japanese (ja)
Inventor
Makoto Tashiro
Tatsuro Beppu
Masami Iwamoto
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7568179A priority Critical patent/JPS561529A/en
Publication of JPS561529A publication Critical patent/JPS561529A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To enhance light emission efficiency, by growing a III-V group compound semiconductor layer on a semiconductor substrate so that the impurity concentration of the layer decreases in the direction of the growth. CONSTITUTION:A Te-doped GaP substrate 14 is set in a recess of a growing boat 12. Molten Ga 16 is heated to the vicinity of an epitaxial growth start temperature under an atmosphere whose main constituent is Ar gas. A slider 15 is moved to bring the substrate 14 and the molten liquid 16 into contact with each other to dissolve the surface of the substrate into the molten liquid 16. The slider is moved to a portion having numerous small holes 17 as a part of the molten liquid 16 remains on the substrate 14. Cooling is started to cause epitaxial growth to produce an N- type GaP-layer. When a prescribed temperature is reached, the cooling is once stopped and N atoms are added into a solution. The cooling is thereafter resumed to grow a GaP-layer of low donor concentration. When a prescribed temperature is reached after that, the cooling is stopped and a vaporized impurity source 19 of Zn is heated to produce a P-type GaP-layer on the N-type GaP-layer.
JP7568179A 1979-06-18 1979-06-18 Manufacture of epitaxial wafer of 3-5 group compound semiconductor Pending JPS561529A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7568179A JPS561529A (en) 1979-06-18 1979-06-18 Manufacture of epitaxial wafer of 3-5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7568179A JPS561529A (en) 1979-06-18 1979-06-18 Manufacture of epitaxial wafer of 3-5 group compound semiconductor

Publications (1)

Publication Number Publication Date
JPS561529A true JPS561529A (en) 1981-01-09

Family

ID=13583177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7568179A Pending JPS561529A (en) 1979-06-18 1979-06-18 Manufacture of epitaxial wafer of 3-5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS561529A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49113590A (en) * 1973-02-26 1974-10-30
JPS5072880A (en) * 1973-10-31 1975-06-16
JPS5453975A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49113590A (en) * 1973-02-26 1974-10-30
JPS5072880A (en) * 1973-10-31 1975-06-16
JPS5453975A (en) * 1977-10-07 1979-04-27 Toshiba Corp Manufacture for gallium phosphide green light emitting element

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