JPS5775420A - Gallium phosphide epitaxial wafer and manufacture thereof - Google Patents

Gallium phosphide epitaxial wafer and manufacture thereof

Info

Publication number
JPS5775420A
JPS5775420A JP15108880A JP15108880A JPS5775420A JP S5775420 A JPS5775420 A JP S5775420A JP 15108880 A JP15108880 A JP 15108880A JP 15108880 A JP15108880 A JP 15108880A JP S5775420 A JPS5775420 A JP S5775420A
Authority
JP
Japan
Prior art keywords
supply
stop
manufacture
3mum
midst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15108880A
Other languages
Japanese (ja)
Inventor
Shinichi Hasegawa
Mikitoshi Ishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15108880A priority Critical patent/JPS5775420A/en
Publication of JPS5775420A publication Critical patent/JPS5775420A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound

Abstract

PURPOSE:To obtain a high luminescent green LED by a method wherein in the midst of epitaxial growth of GaP with N2 added to it, supply of an N2 source is made to stop more than one time to provide plural number of layers having concentration of N2 of 1017/cm2 or less in a radiative recombination region. CONSTITUTION:The epitaxial layer is provided from Ga/HCl/PH3/H2 by vapor phase epitaxy on the (100) face of GaP single crystal. In the midst thereof, supply of NH3 is made to stop more than one time to provide plural number of layers having concentration of N2 of 1017/cm2 or less, thickness of about 0.5-3mum at the interval of about 0.5-3mum. Around changing over of supply of P type and N type impurities, supply of NH3 is made to stop temporarily. By this constitution, even when adding quantity of N2 is increased for enhancement of luminance, yellow exists hardly, and the high luminescent green LED can be obtained. For the substrate, Si, sapphire, CdS, etc., may be used.
JP15108880A 1980-10-28 1980-10-28 Gallium phosphide epitaxial wafer and manufacture thereof Pending JPS5775420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15108880A JPS5775420A (en) 1980-10-28 1980-10-28 Gallium phosphide epitaxial wafer and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15108880A JPS5775420A (en) 1980-10-28 1980-10-28 Gallium phosphide epitaxial wafer and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5775420A true JPS5775420A (en) 1982-05-12

Family

ID=15511057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15108880A Pending JPS5775420A (en) 1980-10-28 1980-10-28 Gallium phosphide epitaxial wafer and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5775420A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220528A (en) * 1987-03-09 1988-09-13 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor film and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63220528A (en) * 1987-03-09 1988-09-13 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor film and manufacture thereof

Similar Documents

Publication Publication Date Title
US8227322B2 (en) Methods of growing nitride-based film using varying pulses
US9129977B2 (en) Method of controlling stress in group-III nitride films deposited on substrates
RU2315135C2 (en) Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides
CA2170922C (en) Compound semiconductor light emitting device and method of preparing the same
CN115458650B (en) Light emitting diode epitaxial wafer, preparation method thereof and light emitting diode
JPH04242985A (en) Gallium nitride group compound semiconductor laser diode
US20020100412A1 (en) Low dislocation buffer and process for production thereof as well as device provided with low dislocation buffer
JPH06103757B2 (en) Diamond electronic device
KR101171324B1 (en) Method of forming buffer layer for a light emitting device of a nitride compound semiconductor and buffer layer formed by the method
JPH02257678A (en) Manufacture of gallium nitride compound semiconductor light-emitting device
JPH0940490A (en) Production of gallium nitride crystal
JP2001156003A (en) Method of manufacturing p-type gallium nitride semiconductor, and light-emitting element using p-type gallium nitride semiconductor
JPS5775420A (en) Gallium phosphide epitaxial wafer and manufacture thereof
JPS5493378A (en) Manufacture for semiconductor device
JPH05243613A (en) Light-emitting device and its manufacture
JPH07283436A (en) Iii-v compound semiconductor and light-emitting element
JPH03163884A (en) Epitaxial wafer and manufacture thereof
TW374206B (en) Method of manufacturing compound semiconductor epitaxial wafers
JPS61106497A (en) Method for growing epitaxial film of gallium phosphide and arsenide
JPS5624985A (en) Manufacture of gallium phosphide green light emitting element
JP2005179171A (en) METHOD OF LATERALLY GROWING GaN WITH INDIUM DOPING
JPH07283437A (en) Method of growing gallium nitride base compound semiconductor crystal
JPH05335621A (en) Gallium phosphide green light emitting diode
JPS5775421A (en) Method of vapor growth compound semiconductor epitaxial film
JPS52103399A (en) Production of gallium nitride