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Application filed by Dogyo Sibaura Denki Co LtdfiledCriticalDogyo Sibaura Denki Co Ltd
Priority to KR7400534ApriorityCriticalpatent/KR790000518B1/en
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Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
(AREA)
Abstract
A method of manufg. a gallium phosphide (Gap) red-emitting diode by forming one n-type Gap layer on an n-type Gap substrate by the liquid phase epitaxial growth process and depositing a p-type Gap layer on the n-type Gap layer, thereby providing a p-n junction contributing to emission of light, and reducing the surface donor concentration of the n-type Gap layer to below 1 × 1018/cm3. Cooling velocity of the solution for epitaxial growth of the p-type Gap layer was less than 5≰C/min.
KR7400534A1974-01-011974-01-01Method of producing gallium phosphide redlight emission diode
KR790000518B1
(en)