GB1533400A - Electroluminescent diode manufacture - Google Patents

Electroluminescent diode manufacture

Info

Publication number
GB1533400A
GB1533400A GB53302/75A GB5330275A GB1533400A GB 1533400 A GB1533400 A GB 1533400A GB 53302/75 A GB53302/75 A GB 53302/75A GB 5330275 A GB5330275 A GB 5330275A GB 1533400 A GB1533400 A GB 1533400A
Authority
GB
United Kingdom
Prior art keywords
layers
nitrogen
dope
doping
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB53302/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1533400A publication Critical patent/GB1533400A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Abstract

1533400 Electroluminescent diodes PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 31 Dec 1975 [7 Jan 1975] 53302/75 Heading H1K A L.E.D. is made by epitaxially depositing first and second group III-V compound semiconductor layers 16, 17 on a substrate 15 while doping both layers 16, 17 to a first conductivity type and also doping both layers with nitrogen such that the first layer 16 has the higher nitrogen concentration, and forming a PN junction 21 in the first layer 16 by locally introducing an impurity which confers the opposite conductivity type to the semiconductor. The first and opposite conductivity types may be produced by S and Zn respectively in a GaP or GaAsP crystal and the Zn may be ion implanted and diffused in. The semiconductor layers 15-17 are deposited by liquid phase epitaxy in a H 2 S-H 2 atmosphere in order to dope with S, and in a NH 3 atmosphere in order to dope with nitrogen. Reference has been directed by the Comptroller to Specification 1,279,674.
GB53302/75A 1975-01-07 1975-12-31 Electroluminescent diode manufacture Expired GB1533400A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500310A FR2297494A1 (en) 1975-01-07 1975-01-07 PROCESS FOR MAKING SEMICONDUCTOR CRYSTALS WITH ISOELECTRONIC NITROGEN TRAPS AND CRYSTALS THUS MANUFACTURED

Publications (1)

Publication Number Publication Date
GB1533400A true GB1533400A (en) 1978-11-22

Family

ID=9149464

Family Applications (1)

Application Number Title Priority Date Filing Date
GB53302/75A Expired GB1533400A (en) 1975-01-07 1975-12-31 Electroluminescent diode manufacture

Country Status (5)

Country Link
JP (1) JPS5193691A (en)
CA (1) CA1047636A (en)
DE (1) DE2558757A1 (en)
FR (1) FR2297494A1 (en)
GB (1) GB1533400A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999063602A1 (en) * 1998-06-02 1999-12-09 Osram Opto Semiconductors Gmbh & Co. Ohg GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551717B2 (en) * 1975-01-29 1980-01-16

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1316490A (en) * 1970-12-17 1973-05-09 Ferranti Ltd Electroluminescent devices
JPS5325634B2 (en) * 1973-04-04 1978-07-27

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999063602A1 (en) * 1998-06-02 1999-12-09 Osram Opto Semiconductors Gmbh & Co. Ohg GaP-SEMICONDUCTOR ARRANGEMENT AND METHOD FOR PRODUCING THE SAME

Also Published As

Publication number Publication date
CA1047636A (en) 1979-01-30
DE2558757C2 (en) 1987-04-23
FR2297494A1 (en) 1976-08-06
FR2297494B1 (en) 1978-03-10
JPS5193691A (en) 1976-08-17
DE2558757A1 (en) 1976-07-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941231