GB1316490A - Electroluminescent devices - Google Patents

Electroluminescent devices

Info

Publication number
GB1316490A
GB1316490A GB1316490DA GB1316490A GB 1316490 A GB1316490 A GB 1316490A GB 1316490D A GB1316490D A GB 1316490DA GB 1316490 A GB1316490 A GB 1316490A
Authority
GB
United Kingdom
Prior art keywords
layer
atoms
diffused
concentration
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Publication of GB1316490A publication Critical patent/GB1316490A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds

Abstract

1316490 Semi-conductor devices FERRANTI Ltd 13 Dec 1971 [17 Dec 1970] 60330/70 Heading H1K [Also in Division C4] A method of manufacturing electroluminescent devices with light emitting pn-junctions 16 comprises depositing an N-type epitaxial layer 12 of gallium phosphide from the liquid phase on to a substrate 11, the layer 12 containing nitrogen or a material having the same electronic nitrogen in the layer, and forming regions 15 of p-type in the layer 12 by diffusion via apertures 14 in an insulating layer 13. The impurity concentration of nitrogen may be 10<SP>16</SP> to 10<SP>19</SP> atoms/cm.<SP>3</SP>, preferably 5 Î 10<SP>17</SP> to 5 Î 10<SP>18</SP> atoms/cc., and the layer 12 may include as an n-type dopant sulphur to a concentration of 10<SP>16</SP> to 5 Î 10<SP>17</SP> atoms/cm.<SP>3</SP>, preferably 5 + 10<SP>16</SP> to 10<SP>17</SP> atoms/cc., or tellurium or silicon. The diffused impurity may be zinc and be diffused from the vapour phase at 650‹ C. to a concentration of 10<SP>18</SP> to 10<SP>19</SP> atoms/cc. Alternatively the zinc may be diffused from a surface layer. Prior to formation of the insulating layer 13, which may be of silicon oxide-silicon nitride-silicon oxide provided by sputtering, the layer 12 may be lapped. The substrate 11 may be of gallium phosphide.
GB1316490D 1970-12-17 1970-12-17 Electroluminescent devices Expired GB1316490A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB6033070 1970-12-17

Publications (1)

Publication Number Publication Date
GB1316490A true GB1316490A (en) 1973-05-09

Family

ID=10485438

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1316490D Expired GB1316490A (en) 1970-12-17 1970-12-17 Electroluminescent devices

Country Status (2)

Country Link
FR (1) FR2118493A5 (en)
GB (1) GB1316490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2558757A1 (en) * 1975-01-07 1976-07-08 Philips Nv PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2558757A1 (en) * 1975-01-07 1976-07-08 Philips Nv PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS

Also Published As

Publication number Publication date
FR2118493A5 (en) 1972-07-28

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees