GB1397305A - Semiconductor light source - Google Patents

Semiconductor light source

Info

Publication number
GB1397305A
GB1397305A GB2935672A GB2935672A GB1397305A GB 1397305 A GB1397305 A GB 1397305A GB 2935672 A GB2935672 A GB 2935672A GB 2935672 A GB2935672 A GB 2935672A GB 1397305 A GB1397305 A GB 1397305A
Authority
GB
United Kingdom
Prior art keywords
region
diffusion
layer
inert atmosphere
lying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2935672A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Valter Maslokevets I V
Original Assignee
Valter Maslokevets I V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valter Maslokevets I V filed Critical Valter Maslokevets I V
Priority to GB2935672A priority Critical patent/GB1397305A/en
Publication of GB1397305A publication Critical patent/GB1397305A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

1397305 Electroluminescence I V VALTERMASLOKOVETS J A VODAKOV GALOMAKINA E N MOKHOV I I KRUGLOV I V RYZHIKOV V I PAVLICHENKO T G KMITA G F KHOLUYANOV and E E VIOLIN 22 June 1972 29356/72 Heading C4S [Also in Division H1] A semi-conductor light source comprises a first N-type region in a SiC substrate, having an uncompensated majority donor concentration lying in the range 0À8 x 10<SP>18</SP> to 5 Î 10<SP>18</SP> cm.<SP>-3</SP>, a thin low resistivity surface P-layer 0À1 to 3 Á thick doped with an acceptor impurity with a low activation energy and having a solubility in SiC lying in the range 2 x 10<SP>18</SP> to 2 Î 10<SP>20</SP> cm.<SP>-3</SP>, and a central layer, 0À05 to 1 Á thick, with donor and acceptor dopants to a concentration of 0À1 Î 10<SP>18</SP> to 2 Î 10<SP>18</SP> cm.<SP>-3</SP>, the central activated and compensated layer having a resistivity > than the first region by at least three orders of magnitude. Donors and acceptors are specified combinations of O, B, N, Be, Al, Ga and Sc, P-type layers may be Al or Ga, and the substrate may be doped with N or N and O to provide the first region. Specific light sources and low temperature operation are detailed. The P-N junction may be formed by Al diffusion in an inert atmosphere including rare earth vapours. Diffusion techniques are preferred with an inert atmosphere including a small addition of activator to reduce outward diffusion. Epitaxial or liquid phase growing is also mentioned. Fabrication details and applications are included.
GB2935672A 1972-06-22 1972-06-22 Semiconductor light source Expired GB1397305A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2935672A GB1397305A (en) 1972-06-22 1972-06-22 Semiconductor light source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2935672A GB1397305A (en) 1972-06-22 1972-06-22 Semiconductor light source

Publications (1)

Publication Number Publication Date
GB1397305A true GB1397305A (en) 1975-06-11

Family

ID=10290227

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2935672A Expired GB1397305A (en) 1972-06-22 1972-06-22 Semiconductor light source

Country Status (1)

Country Link
GB (1) GB1397305A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0890184B1 (en) * 1996-03-27 2009-07-08 Cree, Inc. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0890184B1 (en) * 1996-03-27 2009-07-08 Cree, Inc. A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE HAVING A SEMICONDUCTOR LAYER OF SiC

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Legal Events

Date Code Title Description
416 Proceeding under section 16 patents act 1949
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee