DE2558757C2 - - Google Patents

Info

Publication number
DE2558757C2
DE2558757C2 DE2558757A DE2558757A DE2558757C2 DE 2558757 C2 DE2558757 C2 DE 2558757C2 DE 2558757 A DE2558757 A DE 2558757A DE 2558757 A DE2558757 A DE 2558757A DE 2558757 C2 DE2558757 C2 DE 2558757C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2558757A
Other languages
German (de)
Other versions
DE2558757A1 (en
Inventor
Daniel Diguet
Marc Mahieu
Bernard Caen Fr Legros
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2558757A1 publication Critical patent/DE2558757A1/en
Application granted granted Critical
Publication of DE2558757C2 publication Critical patent/DE2558757C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19752558757 1975-01-07 1975-12-24 PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS Granted DE2558757A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7500310A FR2297494A1 (en) 1975-01-07 1975-01-07 PROCESS FOR MAKING SEMICONDUCTOR CRYSTALS WITH ISOELECTRONIC NITROGEN TRAPS AND CRYSTALS THUS MANUFACTURED

Publications (2)

Publication Number Publication Date
DE2558757A1 DE2558757A1 (en) 1976-07-08
DE2558757C2 true DE2558757C2 (en) 1987-04-23

Family

ID=9149464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752558757 Granted DE2558757A1 (en) 1975-01-07 1975-12-24 PROCESS AND PRODUCTION OF SEMICONDUCTOR CRYSTALS USING ISO ELECTRONIC NITROGEN TRAP CENTERS AND CRYSTALS PRODUCED BY THIS PROCESS

Country Status (5)

Country Link
JP (1) JPS5193691A (en)
CA (1) CA1047636A (en)
DE (1) DE2558757A1 (en)
FR (1) FR2297494A1 (en)
GB (1) GB1533400A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS551717B2 (en) * 1975-01-29 1980-01-16
DE19824566C1 (en) * 1998-06-02 1999-12-02 Siemens Ag GaP semiconductor device and method of manufacturing the same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3646406A (en) * 1970-06-30 1972-02-29 Bell Telephone Labor Inc Electroluminescent pnjunction diodes with nonuniform distribution of isoelectronic traps
GB1316490A (en) * 1970-12-17 1973-05-09 Ferranti Ltd Electroluminescent devices
JPS5325634B2 (en) * 1973-04-04 1978-07-27

Also Published As

Publication number Publication date
JPS5193691A (en) 1976-08-17
FR2297494A1 (en) 1976-08-06
GB1533400A (en) 1978-11-22
DE2558757A1 (en) 1976-07-08
FR2297494B1 (en) 1978-03-10
CA1047636A (en) 1979-01-30

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: NEHMZOW, F., PAT.-ASS., 2000 HAMBURG

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee