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Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed
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Led Devices
(AREA)
Abstract
A method of manufg. a green light-emitting GaP device comprised adding high concentration nitrogen from a nitrogen compound to a liquid phase epitaxial solution maintained at a temp. higher than 1000≰C and precooling the solution to a temp. of 600 to 1000≰C. A thin semiconductor layer was grown by the liquid phase epitaxial growth method at a temp. of 600 to 1000≰C, so that a p-n junction contributing to the emission of light was prepared.
KR7403186A1974-07-271974-07-27Method of making green-light emission device for semiconductor
KR790000630B1
(en)