GB1377404A - Gallium phosphide light emitting semiconductive materials and methods of preparing the same - Google Patents
Gallium phosphide light emitting semiconductive materials and methods of preparing the sameInfo
- Publication number
- GB1377404A GB1377404A GB3403472A GB3403472A GB1377404A GB 1377404 A GB1377404 A GB 1377404A GB 3403472 A GB3403472 A GB 3403472A GB 3403472 A GB3403472 A GB 3403472A GB 1377404 A GB1377404 A GB 1377404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- acceptor
- complexes
- gap
- july
- filled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 229910005540 GaP Inorganic materials 0.000 title 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 abstract 2
- 238000004020 luminiscence type Methods 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 239000000356 contaminant Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 125000004430 oxygen atom Chemical group O* 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1377404 Electroluminescence NORTH AMERICAN PHILIPS CORP 20 July 1972 [23 July 1971] 34034/72 Heading C4S [Also in Division H1] A luminescent single crystal of GaP contains nearest-neighbour complexes each comprising a gallium vacancy V ga filled with an acceptor from the group Be, Mg, Ca, Sr and/or Ba and an oxygen atom occupying a P site O p . The concentration of the complexes is preferably 10<SP>16</SP>-10<SP>18</SP> cm.<SP>-3</SP>, sufficient to produce a luminescence whose colour is determined by the acceptor selected. Cd may optionally be added to modify the emitted spectrum. Although the luminescence may be excited by U.V. light, the preferred embodiment is an electroluminescent diode comprising a P-type GaP layer containing acceptor filled V ga -O p complexes epitaxially grown on an N-type crystal of Te-doped (III) GaP, GaAs, GaAsP or Si. The acceptor may be incorporated during epitaxial growth, but is preferably diffused in and annealed subsequently. Growth may be from the liquid phase, but is preferably an open tube water vapour transport process. In both cases care has to be exercised to exclude contaminants such as Si, C or Cu which would preferentially occupy the Ga vacancies.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16504371A | 1971-07-23 | 1971-07-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1377404A true GB1377404A (en) | 1974-12-18 |
Family
ID=22597173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3403472A Expired GB1377404A (en) | 1971-07-23 | 1972-07-20 | Gallium phosphide light emitting semiconductive materials and methods of preparing the same |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5347679B1 (en) |
| AU (1) | AU4488072A (en) |
| BE (1) | BE786585A (en) |
| CA (1) | CA982809A (en) |
| FR (1) | FR2147106B1 (en) |
| GB (1) | GB1377404A (en) |
| IT (1) | IT964738B (en) |
| NL (1) | NL7209935A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
| GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
-
0
- BE BE786585D patent/BE786585A/en unknown
-
1972
- 1972-07-19 NL NL7209935A patent/NL7209935A/xx unknown
- 1972-07-20 IT IT6936172A patent/IT964738B/en active
- 1972-07-20 GB GB3403472A patent/GB1377404A/en not_active Expired
- 1972-07-21 FR FR7226398A patent/FR2147106B1/fr not_active Expired
- 1972-07-22 JP JP7305372A patent/JPS5347679B1/ja active Pending
- 1972-07-24 AU AU44880/72A patent/AU4488072A/en not_active Expired
- 1972-07-25 CA CA147,832A patent/CA982809A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2158645A (en) * | 1983-05-10 | 1985-11-13 | Raytheon Co | Semiconductor manufacturing methods |
| GB2217943A (en) * | 1988-04-22 | 1989-11-01 | Nat Res Dev | Manufacture of semiconductor or superconductor devices |
| GB2217943B (en) * | 1988-04-22 | 1992-12-23 | Nat Res Dev | Epitaxial deposition. |
Also Published As
| Publication number | Publication date |
|---|---|
| CA982809A (en) | 1976-02-03 |
| AU4488072A (en) | 1974-01-31 |
| IT964738B (en) | 1974-01-31 |
| JPS5347679B1 (en) | 1978-12-22 |
| DE2235427A1 (en) | 1973-01-25 |
| FR2147106B1 (en) | 1980-04-04 |
| DE2235427B2 (en) | 1977-05-12 |
| BE786585A (en) | 1973-01-22 |
| FR2147106A1 (en) | 1973-03-09 |
| NL7209935A (en) | 1973-01-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |