JPS57183021A - Liquid phase epitaxial growth of gallium phosphide - Google Patents

Liquid phase epitaxial growth of gallium phosphide

Info

Publication number
JPS57183021A
JPS57183021A JP6745681A JP6745681A JPS57183021A JP S57183021 A JPS57183021 A JP S57183021A JP 6745681 A JP6745681 A JP 6745681A JP 6745681 A JP6745681 A JP 6745681A JP S57183021 A JPS57183021 A JP S57183021A
Authority
JP
Japan
Prior art keywords
liquid phase
type
grow
type layer
red color
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6745681A
Other languages
Japanese (ja)
Inventor
Toshihiko Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Tottori Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Tottori Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP6745681A priority Critical patent/JPS57183021A/en
Publication of JPS57183021A publication Critical patent/JPS57183021A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials

Abstract

PURPOSE:To prevent reduction of brightness of red color luminescence even when a P type GaP substrate is used when P type layers and N type layers are to be made to grow liquid phase epitaxially on the P type substrate by a method wherein oxygen is added in a molten liquid for N type layer growth. CONSTITUTION:The P type layer 12 is made to grow liquid phase epitaxially on the GaP substrate 11, and the N type layer 13 is made to grow liquid phase epitaxially thereon using the molten liquid obtained by throwing Ga2O3 into the Ga molten liquid added with S. After then, the N type layer 14, the P type layer 15 are made to grow respectively liquid phase epitaxially thereon. Because brightness of red color of the LED manufactured by this way is not reduced by the addition of oxygen, a green color luminescent layer is laminated after then, and the LED to emit from red color up to green color being not mixed with red color can be manufactured.
JP6745681A 1981-05-02 1981-05-02 Liquid phase epitaxial growth of gallium phosphide Pending JPS57183021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6745681A JPS57183021A (en) 1981-05-02 1981-05-02 Liquid phase epitaxial growth of gallium phosphide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6745681A JPS57183021A (en) 1981-05-02 1981-05-02 Liquid phase epitaxial growth of gallium phosphide

Publications (1)

Publication Number Publication Date
JPS57183021A true JPS57183021A (en) 1982-11-11

Family

ID=13345453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6745681A Pending JPS57183021A (en) 1981-05-02 1981-05-02 Liquid phase epitaxial growth of gallium phosphide

Country Status (1)

Country Link
JP (1) JPS57183021A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726126A1 (en) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp LED device mfr. by thermally bonding LEDs

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726126A1 (en) * 1994-10-24 1996-04-26 Mitsubishi Electric Corp LED device mfr. by thermally bonding LEDs

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