JPS57111016A - Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer - Google Patents

Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Info

Publication number
JPS57111016A
JPS57111016A JP18902280A JP18902280A JPS57111016A JP S57111016 A JPS57111016 A JP S57111016A JP 18902280 A JP18902280 A JP 18902280A JP 18902280 A JP18902280 A JP 18902280A JP S57111016 A JPS57111016 A JP S57111016A
Authority
JP
Japan
Prior art keywords
mixed crystal
gallium phosphide
phosphide arsenide
arsenide mixed
ratio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18902280A
Other languages
Japanese (ja)
Other versions
JPS6347135B2 (en
Inventor
Shinichi Hasegawa
Hisanori Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP18902280A priority Critical patent/JPS57111016A/en
Publication of JPS57111016A publication Critical patent/JPS57111016A/en
Publication of JPS6347135B2 publication Critical patent/JPS6347135B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To obtain the wafer with extremely uniform thickness without lowering luminous efficiency by making the ratio of galluium as a gas for gaseous phase growth and arsenic and phosphorus proper. CONSTITUTION:A gallium phosphide arsenide mixed crystal rate varying layer, a gallium phosphide arsenide mixed crystal rate fixed layer and a gallium phosphide arsenide mixed crystal rate fixed layer containing an isoelectronic trap are formed successively onto a single crystal substrate through a gaseous phase epitaxial growth method, and the gallium phosphide arsenide mixed crystal epitaxial wafer is manufactured. The ratio (Ga)/(As+P) of the component concentration of gallium as the gas for the gaseous phase growth of the mixed crystal rate fixed layer containing the isoelectronic trap to the component concentration of phosphorus and arsenic is made within a range of 1.5-5 at that time, and the ratio (Ga)/(As+P) is made within a range of 0.3-1 when growing other layers.
JP18902280A 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer Granted JPS57111016A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18902280A JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS57111016A true JPS57111016A (en) 1982-07-10
JPS6347135B2 JPS6347135B2 (en) 1988-09-20

Family

ID=16233986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18902280A Granted JPS57111016A (en) 1980-12-26 1980-12-26 Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS57111016A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756792A (en) * 1985-09-09 1988-07-12 Mitsubishi Monsanto Chemical Co., Ltd. Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4756792A (en) * 1985-09-09 1988-07-12 Mitsubishi Monsanto Chemical Co., Ltd. Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film

Also Published As

Publication number Publication date
JPS6347135B2 (en) 1988-09-20

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