JPS5670630A - Manufacture of compound semiconductor by gas phase epitaxial growth - Google Patents

Manufacture of compound semiconductor by gas phase epitaxial growth

Info

Publication number
JPS5670630A
JPS5670630A JP14727879A JP14727879A JPS5670630A JP S5670630 A JPS5670630 A JP S5670630A JP 14727879 A JP14727879 A JP 14727879A JP 14727879 A JP14727879 A JP 14727879A JP S5670630 A JPS5670630 A JP S5670630A
Authority
JP
Japan
Prior art keywords
layer
growing
gas phase
hcl
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14727879A
Other languages
Japanese (ja)
Other versions
JPS6222443B2 (en
Inventor
Katsunori Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP14727879A priority Critical patent/JPS5670630A/en
Publication of JPS5670630A publication Critical patent/JPS5670630A/en
Publication of JPS6222443B2 publication Critical patent/JPS6222443B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To form a layer having a sharp impurity distribution by growing one layer when growing in gas phase a plurality of layers having different impurity density, subsequently etching it in the III group element-containing atmosphere in the Periodic Table and then growing next layer. CONSTITUTION:HCl and H2S for feeding AsH3 and Ga are supplied as carrier gases onto a GaAs substrate, thereby growing an N type GaAs layer 1 of 1.2X10<18>cm<-3>. Then, HCl for feeding Ga and HCl are supplied at 10ml/min and 60ml/min for approx. 10 sec, thereby etching the layer 1 in 0.7mum, and AsH3 is further flowed without adding impurity, thereby growing an N type GaAs layer 2 of 1.8X10<15>cm<-3>. Thus, the impurity density distribution forms sharply in the layer, and there can be obtained a layer having preferable performance in forming an IMPATT diode or the like.
JP14727879A 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth Granted JPS5670630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14727879A JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Publications (2)

Publication Number Publication Date
JPS5670630A true JPS5670630A (en) 1981-06-12
JPS6222443B2 JPS6222443B2 (en) 1987-05-18

Family

ID=15426587

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14727879A Granted JPS5670630A (en) 1979-11-14 1979-11-14 Manufacture of compound semiconductor by gas phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5670630A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A2 (en) * 1992-06-02 1993-12-08 Mitsubishi Chemical Corporation Method of preparing compound semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (en) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (en) * 1972-06-05 1974-02-12

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0573270A2 (en) * 1992-06-02 1993-12-08 Mitsubishi Chemical Corporation Method of preparing compound semiconductor
EP0573270A3 (en) * 1992-06-02 1994-02-16 Mitsubishi Chem Ind

Also Published As

Publication number Publication date
JPS6222443B2 (en) 1987-05-18

Similar Documents

Publication Publication Date Title
Yamamoto et al. Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
JPS5696834A (en) Compound semiconductor epitaxial wafer and manufacture thereof
JPS649613A (en) Formation of iii-v compound semiconductor
US4252576A (en) Epitaxial wafer for use in production of light emitting diode
CA1217880A (en) Process for diffusing impurities into a semiconductor body
JPS56138917A (en) Vapor phase epitaxial growth
JPS6453411A (en) Manufacture of semiconductor thin film
JPS5670630A (en) Manufacture of compound semiconductor by gas phase epitaxial growth
US4216037A (en) Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer
KR870003554A (en) Vapor phase epitaxial growth method of potassium arsenide single crystal thin film
JPS61106497A (en) Method for growing epitaxial film of gallium phosphide and arsenide
JPS6437832A (en) Method of growing compound semiconductor crystal
JPS649896A (en) Method for growing iii-v compound semiconductor crystal on si substrate
JPS5577130A (en) Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound
JPS5618000A (en) Vapor phase growing method for 3-5 group compound semiconductor
KR950029246A (en) Selective Crystal Growth Method of Compound Semiconductor
JPS61145823A (en) Molecular beam epitaxial growth method
JPS5696860A (en) Semiconductor device
JPS649895A (en) Method for growing iii-v compound semiconductor crystal on si substrate
JPH01179795A (en) Vapor growth method for iii-v compound semiconductor
JPS56105626A (en) Compound semiconductor thin film single crystal
JPS57111016A (en) Manufacture of gallium phosphide arsenide mixed crystal epitaxial wafer
JPH01179411A (en) Iii-v compound semiconductor vapor growth method
JPS56118329A (en) Vapor phase epitaxial growth method for compound semiconductor monocrystalling thin film
JPS5673427A (en) Manufacture of gallium arsenide epitaxial wafer