JPS5673427A - Manufacture of gallium arsenide epitaxial wafer - Google Patents

Manufacture of gallium arsenide epitaxial wafer

Info

Publication number
JPS5673427A
JPS5673427A JP15025379A JP15025379A JPS5673427A JP S5673427 A JPS5673427 A JP S5673427A JP 15025379 A JP15025379 A JP 15025379A JP 15025379 A JP15025379 A JP 15025379A JP S5673427 A JPS5673427 A JP S5673427A
Authority
JP
Japan
Prior art keywords
hcl
layer
flow rate
gaas
specified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15025379A
Other languages
Japanese (ja)
Other versions
JPS6222444B2 (en
Inventor
Katsunobu Maeda
Yoshinobu Tsujikawa
Hideki Oikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
Original Assignee
Mitsubishi Monsanto Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15025379A priority Critical patent/JPS5673427A/en
Publication of JPS5673427A publication Critical patent/JPS5673427A/en
Publication of JPS6222444B2 publication Critical patent/JPS6222444B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To obtain an N<+>-N<->-N<+> layer with good reproducibility in gaseous phase epitaxial growth of GaAs, by performing etching in the Ga atmosphere in the case of forming an N<+>-N<-> interface, and performing etching in the As atmosphere in the case of forming the N<->-N<+> interface. CONSTITUTION:An N<+> GaAs layer is provided on the surface of a single crystal substrate of N type GaAs by using AsH3-Ga-HCl-H2 series gas, and an N<-> layer is grown to the specified thickness in the gaseous phase. The growing is stopped, As component is flowed at a specified flow rate, and the etching is performed by HCl. The more the flow rate of the As component, the smoother the profile of the change in carrier concentration. Then a specified amount of the N type dopant is supplied, and the N<-> layer is grown. After the specified thickness is obtained, the growing is stopped. HCl for Ga transportation is flowed at a specified flow rate, other HCl is introduced, and the etching is performed. If the flow rate of HCl for Ga transportation is 2X10<-4>mol/min. or more, the steep rising of the carrier concentration with a dip can be obtained. In this constitution, the GaAs epitaxial layer with the N<+>-N<->-N<+> structure can be obtained with good reproducibility.
JP15025379A 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer Granted JPS5673427A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15025379A JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Publications (2)

Publication Number Publication Date
JPS5673427A true JPS5673427A (en) 1981-06-18
JPS6222444B2 JPS6222444B2 (en) 1987-05-18

Family

ID=15492895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15025379A Granted JPS5673427A (en) 1979-11-20 1979-11-20 Manufacture of gallium arsenide epitaxial wafer

Country Status (1)

Country Link
JP (1) JPS5673427A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768803B1 (en) * 2001-06-14 2007-10-19 익시스 코포레이션 Semiconductor devices having group ?-? compound layers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (en) * 1972-06-05 1974-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915991A (en) * 1972-06-05 1974-02-12

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100768803B1 (en) * 2001-06-14 2007-10-19 익시스 코포레이션 Semiconductor devices having group ?-? compound layers

Also Published As

Publication number Publication date
JPS6222444B2 (en) 1987-05-18

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