JPS5577130A - Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound - Google Patents

Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound

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Publication number
JPS5577130A
JPS5577130A JP15074478A JP15074478A JPS5577130A JP S5577130 A JPS5577130 A JP S5577130A JP 15074478 A JP15074478 A JP 15074478A JP 15074478 A JP15074478 A JP 15074478A JP S5577130 A JPS5577130 A JP S5577130A
Authority
JP
Japan
Prior art keywords
carrier density
base board
supplying
compound
gaseous phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15074478A
Other languages
Japanese (ja)
Inventor
Katsunobu Maeda
Yoshinobu Tsujikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Kasei Polytec Co
NEC Corp
Original Assignee
Mitsubishi Monsanto Chemical Co
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Monsanto Chemical Co, NEC Corp, Nippon Electric Co Ltd filed Critical Mitsubishi Monsanto Chemical Co
Priority to JP15074478A priority Critical patent/JPS5577130A/en
Publication of JPS5577130A publication Critical patent/JPS5577130A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To alleviate regulation of carrier density by changing the ratio of supply of compound of groups III and V within the range of (III/V)>1 in realizing epitaxial growth on the base board of semiconductor layer of compound of groups IIIWV with carrier density less than 2×1016/cm3.
CONSTITUTION: Carrier density is regulated to be 2.3×1018/cm3 by doping Si and, using GaAs base board of n-type with its crystallographic face direction inclined by 2.5° in the direction of (111) from the face (100), the surface is finished to be flat. After being cleared, it is put in the reactor containing metal Ga. Then, supplying H2 gas, the container is heated to 800°C and, while supplying AsH3 and HCl diluted with H2 gas, GaAs epitaxial layer undoped is made to grow on the base board. On this occasion supplying ratio of elements of groups III and V is set to be more than 1 or rather more than 1.5 and the carrier density of growing layer is regulated to be 8×1015W1.3×1016/cm3. Thus the pollution from device is prevented and cleaning and baking after operation become unnecessary.
COPYRIGHT: (C)1980,JPO&Japio
JP15074478A 1978-12-06 1978-12-06 Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound Pending JPS5577130A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15074478A JPS5577130A (en) 1978-12-06 1978-12-06 Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15074478A JPS5577130A (en) 1978-12-06 1978-12-06 Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound

Publications (1)

Publication Number Publication Date
JPS5577130A true JPS5577130A (en) 1980-06-10

Family

ID=15503458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15074478A Pending JPS5577130A (en) 1978-12-06 1978-12-06 Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound

Country Status (1)

Country Link
JP (1) JPS5577130A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162378A (en) * 1981-03-30 1982-10-06 Asahi Chem Ind Co Ltd Novel indium antimony series composite crystal semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162378A (en) * 1981-03-30 1982-10-06 Asahi Chem Ind Co Ltd Novel indium antimony series composite crystal semiconductor

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