JPS5577130A - Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound - Google Patents
Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compoundInfo
- Publication number
- JPS5577130A JPS5577130A JP15074478A JP15074478A JPS5577130A JP S5577130 A JPS5577130 A JP S5577130A JP 15074478 A JP15074478 A JP 15074478A JP 15074478 A JP15074478 A JP 15074478A JP S5577130 A JPS5577130 A JP S5577130A
- Authority
- JP
- Japan
- Prior art keywords
- carrier density
- base board
- supplying
- compound
- gaseous phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To alleviate regulation of carrier density by changing the ratio of supply of compound of groups III and V within the range of (III/V)>1 in realizing epitaxial growth on the base board of semiconductor layer of compound of groups IIIWV with carrier density less than 2×1016/cm3.
CONSTITUTION: Carrier density is regulated to be 2.3×1018/cm3 by doping Si and, using GaAs base board of n-type with its crystallographic face direction inclined by 2.5° in the direction of (111) from the face (100), the surface is finished to be flat. After being cleared, it is put in the reactor containing metal Ga. Then, supplying H2 gas, the container is heated to 800°C and, while supplying AsH3 and HCl diluted with H2 gas, GaAs epitaxial layer undoped is made to grow on the base board. On this occasion supplying ratio of elements of groups III and V is set to be more than 1 or rather more than 1.5 and the carrier density of growing layer is regulated to be 8×1015W1.3×1016/cm3. Thus the pollution from device is prevented and cleaning and baking after operation become unnecessary.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15074478A JPS5577130A (en) | 1978-12-06 | 1978-12-06 | Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15074478A JPS5577130A (en) | 1978-12-06 | 1978-12-06 | Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5577130A true JPS5577130A (en) | 1980-06-10 |
Family
ID=15503458
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15074478A Pending JPS5577130A (en) | 1978-12-06 | 1978-12-06 | Gaseous phase growing method of semiconductor epitaxial film of low carrier-density compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5577130A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162378A (en) * | 1981-03-30 | 1982-10-06 | Asahi Chem Ind Co Ltd | Novel indium antimony series composite crystal semiconductor |
-
1978
- 1978-12-06 JP JP15074478A patent/JPS5577130A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57162378A (en) * | 1981-03-30 | 1982-10-06 | Asahi Chem Ind Co Ltd | Novel indium antimony series composite crystal semiconductor |
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