JPS5271172A - Growth of p type boron phosphide semiconductor - Google Patents

Growth of p type boron phosphide semiconductor

Info

Publication number
JPS5271172A
JPS5271172A JP14764475A JP14764475A JPS5271172A JP S5271172 A JPS5271172 A JP S5271172A JP 14764475 A JP14764475 A JP 14764475A JP 14764475 A JP14764475 A JP 14764475A JP S5271172 A JPS5271172 A JP S5271172A
Authority
JP
Japan
Prior art keywords
boron phosphide
growth
type boron
phosphide semiconductor
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14764475A
Other languages
Japanese (ja)
Inventor
Katsuto Nagano
Shozo Sasa
Takeshi Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP14764475A priority Critical patent/JPS5271172A/en
Publication of JPS5271172A publication Critical patent/JPS5271172A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a mirror surface of good crystallinity by using N2 rare gas or N2 containing less than 10 vol% of H2, rare gas or their mixed gas as a carrier gas and making the component ratio of PH3 and B2H6 20-200 and substrate temperature 880-1,030°C at the time of epitaxially growing boron phosphide semiconductors by using PH3 and B2H6.
COPYRIGHT: (C)1977,JPO&Japio
JP14764475A 1975-12-10 1975-12-10 Growth of p type boron phosphide semiconductor Pending JPS5271172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14764475A JPS5271172A (en) 1975-12-10 1975-12-10 Growth of p type boron phosphide semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14764475A JPS5271172A (en) 1975-12-10 1975-12-10 Growth of p type boron phosphide semiconductor

Publications (1)

Publication Number Publication Date
JPS5271172A true JPS5271172A (en) 1977-06-14

Family

ID=15434989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14764475A Pending JPS5271172A (en) 1975-12-10 1975-12-10 Growth of p type boron phosphide semiconductor

Country Status (1)

Country Link
JP (1) JPS5271172A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108796616A (en) * 2018-05-04 2018-11-13 中国电子科技集团公司第五十五研究所 A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108796616A (en) * 2018-05-04 2018-11-13 中国电子科技集团公司第五十五研究所 A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity
CN108796616B (en) * 2018-05-04 2021-03-16 中国电子科技集团公司第五十五研究所 Method for improving uniformity of p-type doping concentration in silicon carbide epitaxial wafer

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