JPS5271172A - Growth of p type boron phosphide semiconductor - Google Patents
Growth of p type boron phosphide semiconductorInfo
- Publication number
- JPS5271172A JPS5271172A JP14764475A JP14764475A JPS5271172A JP S5271172 A JPS5271172 A JP S5271172A JP 14764475 A JP14764475 A JP 14764475A JP 14764475 A JP14764475 A JP 14764475A JP S5271172 A JPS5271172 A JP S5271172A
- Authority
- JP
- Japan
- Prior art keywords
- boron phosphide
- growth
- type boron
- phosphide semiconductor
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a mirror surface of good crystallinity by using N2 rare gas or N2 containing less than 10 vol% of H2, rare gas or their mixed gas as a carrier gas and making the component ratio of PH3 and B2H6 20-200 and substrate temperature 880-1,030°C at the time of epitaxially growing boron phosphide semiconductors by using PH3 and B2H6.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14764475A JPS5271172A (en) | 1975-12-10 | 1975-12-10 | Growth of p type boron phosphide semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14764475A JPS5271172A (en) | 1975-12-10 | 1975-12-10 | Growth of p type boron phosphide semiconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5271172A true JPS5271172A (en) | 1977-06-14 |
Family
ID=15434989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14764475A Pending JPS5271172A (en) | 1975-12-10 | 1975-12-10 | Growth of p type boron phosphide semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5271172A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108796616A (en) * | 2018-05-04 | 2018-11-13 | 中国电子科技集团公司第五十五研究所 | A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity |
-
1975
- 1975-12-10 JP JP14764475A patent/JPS5271172A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108796616A (en) * | 2018-05-04 | 2018-11-13 | 中国电子科技集团公司第五十五研究所 | A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity |
CN108796616B (en) * | 2018-05-04 | 2021-03-16 | 中国电子科技集团公司第五十五研究所 | Method for improving uniformity of p-type doping concentration in silicon carbide epitaxial wafer |
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