Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Filing date
Publication date
Application filed by Mitsubishi Electric CorpfiledCriticalMitsubishi Electric Corp
Priority to JP2672976ApriorityCriticalpatent/JPS52109867A/en
Publication of JPS52109867ApublicationCriticalpatent/JPS52109867A/en
PURPOSE: To make uniform for the carrier density distribution, by saturating in advance As thru the mixing of GaAs crystal more than the solubility in Ga, in gas phase epitaxial growning of GaAs on the GaAs base by using Ga, AsCl3, H2 or inactive gas.
COPYRIGHT: (C)1977,JPO&Japio
JP2672976A1976-03-121976-03-12Manufacture for semiconductor crystal
PendingJPS52109867A
(en)