JPS5218174A - Iii-v group compound semiconductor crystal surface inactivation method - Google Patents
Iii-v group compound semiconductor crystal surface inactivation methodInfo
- Publication number
- JPS5218174A JPS5218174A JP9432375A JP9432375A JPS5218174A JP S5218174 A JPS5218174 A JP S5218174A JP 9432375 A JP9432375 A JP 9432375A JP 9432375 A JP9432375 A JP 9432375A JP S5218174 A JPS5218174 A JP S5218174A
- Authority
- JP
- Japan
- Prior art keywords
- iii
- compound semiconductor
- semiconductor crystal
- group compound
- crystal surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: In order to inactivate the surface of GaAs element, through using the film being epitaxially grown through using Ga Solution being Cr added.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9432375A JPS5218174A (en) | 1975-08-01 | 1975-08-01 | Iii-v group compound semiconductor crystal surface inactivation method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9432375A JPS5218174A (en) | 1975-08-01 | 1975-08-01 | Iii-v group compound semiconductor crystal surface inactivation method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5218174A true JPS5218174A (en) | 1977-02-10 |
Family
ID=14107063
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9432375A Pending JPS5218174A (en) | 1975-08-01 | 1975-08-01 | Iii-v group compound semiconductor crystal surface inactivation method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5218174A (en) |
-
1975
- 1975-08-01 JP JP9432375A patent/JPS5218174A/en active Pending
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