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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP12438074ApriorityCriticalpatent/JPS51126045A/en
Publication of JPS51126045ApublicationCriticalpatent/JPS51126045A/en
PURPOSE: The crystalized gaseous phase growth method that has been superior in thickness and mass-production characteristics, and moreover, is able to build a combination to indicate conducting carrier thickness change by the growth process.
COPYRIGHT: (C)1976,JPO&Japio
JP12438074A1974-10-301974-10-30Gaseous phase growth method of iii-v group compounded semiconductors
PendingJPS51126045A
(en)