CN108796616A - A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity - Google Patents
A method of improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity Download PDFInfo
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- CN108796616A CN108796616A CN201810418667.1A CN201810418667A CN108796616A CN 108796616 A CN108796616 A CN 108796616A CN 201810418667 A CN201810418667 A CN 201810418667A CN 108796616 A CN108796616 A CN 108796616A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
Abstract
The invention discloses a kind of methods improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, based on chemical vapor deposition growth technology, a small amount of silicon source, carbon source, hydrogen chloride and trimethyl aluminium etc. are added in pedestal flotation gas, carrier gas is used as by flotation gas again, a small amount of process gas is pushed into graphite base edge, to finely tune the p-type doping efficiency of edges of substrate.The deviation that the present invention effectively reduces the doping concentration of marginal point and central point that epitaxial wafer is brought due to nonlinear depletion effectively optimizes doping concentration uniformity in the piece of epitaxial wafer under the premise of not changing key process parameter.The process compatible has higher promotional value in conventional SiC epitaxy techniques.
Description
Technical field
The invention belongs to technical field of semiconductor more particularly to a kind of raising silicon carbide epitaxial wafer piece inner p-type to adulterate
The method of even concentration.
Background technology
In recent years, with the continuous development of power electronic technique, the conventional electric power electronics device based on silicon (Si) material
The physical limitation of part increasingly shows, seriously constrain device operating voltage (<8kV), operating current, working frequency, work
Temperature (<175 DEG C), the raisings of the performances such as dissipated power and radioresistance.
Currently, silicon carbide (SiC) material is generally recognised as follow-on power electronic devices material in the world.SiC electric power electricity
Sub- device possesses extra-high voltage (up to 40,000 volts), super-large current (up to kilo-ampere), superelevation junction temperature (500 DEG C or more) and height
The special performances potentiality such as reliability are the core elements of power electronic equipment in large capacity application.As a kind of ambipolar full control
Switching device, isolated-gate field effect transistor (IGFET) (IGBT) are the leading structures of high-voltage large-capacity power electronic devices.IGBT device
Different from schottky diode device, the p-type epitaxial layer containing high quality in epitaxial structure obtains low-defect-density, Gao Jun
The p-type SiC epitaxial layer of even property is the basis that SiC IGBT are developed.
In recent years, N-shaped SiC epitaxy technologies make great progress, either defect inhibits or uniformity regulates and controls
Technology all achieves breakthrough, but p-type SiC epitaxy technologies then can not show a candle to N-shaped SiC epitaxy technology maturations.In a kind of patent " raising carbon
It is proposed by air supporting gas in the method (ZL201310615586.8) of N-shaped doping concentration uniformity in SiClx epitaxial wafer piece "
It is dense to reach N-shaped doping in raising epitaxial wafer piece under the premise of not changing extension key process parameter for adding technology gas in body
Spend the purpose of uniformity.By the mechanism for adjusting the doping of epitaxial wafer edge of the adding technology gas in flotation gas for improving
Uniformity is equally applicable in p-type doping piece, but the control law of p-type doping and N-shaped doping is completely different, is carried in the patent
The method gone out is not particularly suited for p-type SiC extensions.
Aluminium is effective p-type dopant of silicon carbide, silicon wafer position is occupied in silicon carbide, therefore there are Al foreign atoms and Si
The competition mechanism of atom, p-type doping efficiency and carbon silicon ratio (C/Si ratios) are directly proportional, can by adjusting the C/Si ratios in process gas
To change the efficiency of p-type doping.When epitaxial wafer edge and little central p-type doping concentration difference, by gas gas
Silicon source or carbon source, the C/Si ratios at local modulation epitaxial wafer edge are added in floating, achievees the purpose that due to uniformity in optimization piece.
In the case that epitaxial wafer edge and central p-type doping concentration differ greatly, if further adjusting the C/Si ratios at edge, it will
Cause edge C/Si ratios to deviate process window, epitaxy defect quantity is caused to increase.It needs to adjust side in other way at this time
The doping efficiency of edge.The probability that Al enters lattice can also be greatly reduced in hydrogen chloride, reduce p-type doping efficiency.By in air supporting
The middle hydrogen chloride that is added can reduce the p-type doping efficiency at epitaxial wafer edge.And addition trimethyl aluminium can directly in flotation gas
Directly to promote the p-type doping concentration at epitaxial wafer edge.
Invention content
Goal of the invention：In view of the above problems, the present invention proposes that a kind of raising silicon carbide epitaxial wafer piece inner p-type doping concentration is equal
The method of even property.
Technical solution：To achieve the purpose of the present invention, the technical solution adopted in the present invention is：Outside a kind of raising silicon carbide
Prolong the method for piece piece inner p-type doping concentration uniformity, including step：
(1) silicon face silicon carbide substrates are placed on the indoor graphite base of silicon carbide epitaxy system response；
(2) reative cell gas is repeatedly replaced using argon gas, is passed through hydrogen to reative cell, is gradually increased hydrogen flowing quantity
To 60~120L/min, setting chamber pressure is 80~200mbar, by reative cell be gradually heating to growth temperature 1550~
1700 DEG C, reaction chamber temperature is maintained 5~15 minutes after reaching growth temperature, pure hydrogen etching is carried out to substrate；
(3) it is passed through small flow silicon source and carbon source to reative cell, the flow-rate ratio for controlling silicon source and hydrogen is less than 0.03%, and leads to
Enter p-type doped source trimethyl aluminium, growth thickness is 0.5-5 μm, and doping concentration is 1~5E18cm-3Highly doped buffer layer；
(4) using it is linear it is gradual by the way of the flow of silicon source, carbon source and p-type doped source changed to growth epitaxial structure institute
The setting value needed, and the distribution mode selection according to exemplary epitaxial piece doping concentration under the process conditions along substrate diameter direction adds
Enter the type of the process gas in flotation gas；
(5) after completing epitaxial structures growth, growth source and doped source is closed, reaction chamber temperature cools down in hydrogen atmosphere
To room temperature, reaction chamber temperature reaches hydrogen is discharged after room temperature after, repeatedly replaced by argon gas to reacting indoor gas,
After chamber pressure is finally inflated to atmospheric pressure with argon gas, begin to speak to take piece.
In the step (4), when epitaxial wafer p-type doping concentration both sides height, intermediate low, when being in bowl-shape distribution, and edge is mixed
When miscellaneous concentration is no more than central point doping concentration 20%, silicon source is added in flotation gas, the silicon source stream added in flotation gas
Amount is no more than technique with the 15% of silicon source flow.
In the step (4), when epitaxial wafer p-type doping concentration both sides height, intermediate low, when being in bowl-shape distribution, and edge is mixed
When miscellaneous concentration is more than central point doping concentration 20%, silicon source and hydrogen chloride are added in flotation gas, is added in flotation gas
Silicon source flow be no more than technique with the 15% of silicon source flow, hydrogen chloride flow is no more than reative cell hydrogen flowing quantity 0.05%.
In the step (4), when epitaxial wafer p-type doping concentration both sides are low, centre is high, when in the distribution of arch bridge shape, and edge
When doping concentration is more than central point doping concentration 20%, carbon source is added in flotation gas, the carbon source flow added in flotation gas
No more than technique with the 15% of carbon source flow.
In the step (4), when epitaxial wafer p-type doping concentration both sides are low, centre is high, when in the distribution of arch bridge shape, and edge
When doping concentration is more than central point doping concentration 20%, carbon source and trimethyl aluminium are added in flotation gas, is added in flotation gas
Carbon source flow be no more than technique with the 15% of carbon source flow, trimethyl aluminium actual flow is no more than reative cell hydrogen flowing quantity
0.02%.
In the step (1), chooses and be biased to<11-20>The silicon face silicon carbide substrates in 4 ° or 8 ° of direction.
In the step (4), the silicon source is silane, dichloro hydrogen silicon, trichlorosilane or tetrachloro hydrogen silicon；The carbon source is first
Alkane, ethylene, acetylene or propane.
Advantageous effect：Compared with common epitaxy technology, the present invention in flotation gas by being added a small amount of process gas
Body, to realize the optimization of epitaxial wafer doping concentration uniformity, closes under conditions of not changing key process parameter to increase
The selection window of key technological parameter, to realize the key indexes such as more outstanding background concn, surface topography, defect concentration.
Description of the drawings
Fig. 1 is the schematic diagram that auxiliary gas fine tuning edges of substrate gas distribution is added in pedestal flotation gas；
Fig. 2 is that after 3.5ml/min propane is added in flotation gas, different flow trimethyl is added in flotation gas
Aluminium, the radially distributed comparison diagram of epitaxial wafer doping concentration.
Specific implementation mode
Technical scheme of the present invention is further described with reference to the accompanying drawings and examples.
In order under the premise of not changing extension key process parameter, improve silicon carbide epitaxial wafer piece inner p-type doping concentration
Uniformity, reduces the doping concentration deviation of silicon carbide epitaxial wafer central point and marginal point, and the present invention proposes a kind of raising silicon carbide
The method of epitaxial wafer piece inner p-type doping concentration uniformity.
The method of the raising silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity of the present invention, including step：
(1) it chooses and is biased to<11-20>The silicon face silicon carbide substrates in 4 ° or 8 ° of direction, SiC epitaxial systems are placed in by substrate
It reacts on indoor graphite base；
(2) reative cell gas is repeatedly replaced using argon gas, hydrogen (H is passed through to reative cell2), it is gradually increased hydrogen
Flow selects hydrogen to push graphite base rotation as flotation gas to 60~120L/min, setting chamber pressure for 80~
Reative cell is gradually heating to 1550~1700 DEG C of growth temperature by 200mbar, and reaction chamber temperature 5 is maintained after reaching growth temperature
~15 minutes, pure hydrogen H is carried out to substrate2Etching；
(3) it is passed through small flow silicon source and carbon source to reative cell, controls the flow-rate ratio (Si/H of silicon source and hydrogen2Than) be less than
0.03%, and it is passed through p-type doped source trimethyl aluminium (TMA), 0.5-5 μm of growth thickness, 1~5E18cm of doping concentration-3It is highly doped
Buffer layer；
(4) using it is linear it is gradual by the way of the flow of silicon source, carbon source and p-type doped source changed to growth epitaxial structure institute
The setting value needed, root and the distribution mode according to exemplary epitaxial piece doping concentration under the process conditions along substrate diameter direction select
The type of the process gas in flotation gas is added, as shown in Figure 1, specific choice method is as follows：
(4.1) under process conditions, epitaxial wafer p-type doping concentration both sides are high, intermediate low, when being in bowl-shape distribution, and edge
In the case that doping concentration is no more than central point doping concentration 20%, silicon source is added in flotation gas, is added in flotation gas
Silicon source flow be no more than technique with the 15% of silicon source flow；
(4.2) under process conditions, epitaxial wafer p-type doping concentration both sides are high, intermediate low, when being in bowl-shape distribution, and edge
In the case that doping concentration is more than central point doping concentration 20%, silicon source and hydrogen chloride, air supporting gas are added in flotation gas
The silicon source flow added in body is no more than the 15% of technique silicon source flow, and hydrogen chloride flow is no more than reative cell hydrogen flowing quantity
0.05%；
(4.3) under process conditions, epitaxial wafer p-type doping concentration both sides are low, intermediate high, when in the distribution of arch bridge shape, and side
In the case that edge doping concentration is more than central point doping concentration 20%, carbon source is added in flotation gas, is added in flotation gas
Carbon source flow is no more than technique with the 15% of carbon source flow；
(4.4) under process conditions, epitaxial wafer p-type doping concentration both sides are low, intermediate high, when in the distribution of arch bridge shape, and side
In the case that edge doping concentration is more than central point doping concentration 20%, carbon source and trimethyl aluminium, air supporting are added in flotation gas
The carbon source flow added in gas is no more than the 15% of technique carbon source flow, and trimethyl aluminium actual flow is no more than reative cell hydrogen
Throughput 0.01%.
The flow for the auxiliary gas being added in flotation gas is set according to critical craft, and actual numerical value is needed by more
Secondary Experimental comparison determines, to realize flat doping concentration radial distribution as selection criteria.The epitaxial growth time is according to actual
Extension rate and the setting of required epitaxy layer thickness.
(5) after completing epitaxial structures growth, growth source and doped source are closed, by reaction chamber temperature in hydrogen atmosphere
Be cooled to room temperature, reaction chamber temperature reach after room temperature by hydrogen it is exclusive after, by argon gas to react indoor gas carry out it is multiple
Displacement, after chamber pressure is finally inflated to atmospheric pressure with argon gas, begins to speak to take piece.
Technical scheme of the present invention is described in detail below by a specific embodiment.
The raising silicon carbide epitaxial wafer piece inner p-type doping concentration in SiC chemical vapor deposition epitaxial systems of the present invention is equal
The method of even property includes the following steps：
1, it chooses and is biased to<11-20>The silicon face silicon carbide substrates in 4 ° of direction, substrate is placed in SiC epitaxial system reative cells
Graphite base on；
2, reative cell gas is repeatedly replaced using argon gas, hydrogen (H is passed through to reative cell2), it is gradually increased hydrogen
Flow selects hydrogen to push graphite base rotation as flotation gas, hydrogen flowing quantity 1000ml/min, setting is instead to 100L/min
It is 100mbar to answer chamber pressure, and reative cell is gradually heating to 1650 DEG C of growth temperature, and reaction room temperature is maintained after reaching growth temperature
Degree 5 minutes carries out pure hydrogen H to substrate2Etching；
3, it is passed through silane and propane to reative cell, flow is 20ml/min and 10ml/min respectively, and is passed through doped source three
Aluminium methyl, flow 20ml/min, time are set as 12 minutes, 1 μm of growth thickness, doping concentration 3E18cm-3The highly doped buffering of p-type
Layer；
4, setting trimethyl aluminium flow is to 10ml/min, using it is linear it is gradual by the way of in 30 seconds by silane and propane
Flow enhancement is added propane in flotation gas and trimethyl aluminium flow is respectively set as to 50ml/min and 25ml/min
3.5ml/min and 3ml/min, time are set as 30 minutes, the p-type doped epitaxial layer of 12 microns of growth；
5, after completing epitaxial structures growth, growth source and doped source are closed, by reaction chamber temperature in hydrogen atmosphere
Be cooled to room temperature, reaction chamber temperature reach after room temperature by hydrogen it is exclusive after, by argon gas to react indoor gas carry out it is multiple
Displacement, after chamber pressure is finally inflated to atmospheric pressure with argon gas, begins to speak to take piece.
Propane and trimethyl aluminium flow are respectively set as 3.5ml/min and 3ml/min in flotation gas in above-mentioned steps 4
The reason of be：In silane flow rate 50ml/min, propane flow 25ml/min, 1650 DEG C of growth temperature, chamber pressure
100mbar, hydrogen air supporting flow 1000ml/min Typical process conditions under, epitaxial wafer p-type doping concentration both sides are low, intermediate
Height is distributed in arch bridge, and the p-type doping concentration deviation of edge and central point is more than 20%.According to the proposed method, due to
For the propane that technique uses for 25ml/min, the propane flow added in flotation gas should not be greater than 3.75ml/min, this implementation
3.5ml/min propane is added in selection in flotation gas in example.It is adjusted later by the way that trimethyl aluminium is added in flotation gas
Section.Fig. 2 is that after 3.5ml/min propane is added in flotation gas, different flow trimethyl aluminium, extension are added in flotation gas
The radially distributed comparison diagram of piece doping concentration.It can be seen that under the process conditions, select the trimethyl aluminium flow of 3ml/min can
To realize relatively flat p-type doping concentration.
It, can be under conditions of not changing key process parameter by the way that a small amount of process gas is added in flotation gas
Effectively doping concentration uniformity in the piece of optimization epitaxial wafer.It is more excellent to realize to increase the window of key process parameter
The key indexes such as elegant background concn, surface topography, defect concentration.
Claims (7)
1. a kind of method improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, it is characterised in that：Including step：
(1) silicon face silicon carbide substrates are placed on the indoor graphite base of silicon carbide epitaxy system response；
(2) reative cell gas is repeatedly replaced using argon gas, hydrogen is passed through to reative cell, be gradually increased hydrogen flowing quantity to 60
~120L/min, setting chamber pressure are 80~200mbar, and reative cell is gradually heating to growth temperature 1550~1700
DEG C, it maintains reaction chamber temperature 5~15 minutes after reaching growth temperature, pure hydrogen etching is carried out to substrate；
(3) it is passed through small flow silicon source and carbon source to reative cell, the flow-rate ratio for controlling silicon source and hydrogen is less than 0.03%, and is passed through p
Type doped source trimethyl aluminium, growth thickness are 0.5-5 μm, and doping concentration is 1~5E18cm-3Highly doped buffer layer；
(4) using it is linear it is gradual by the way of the flow of silicon source, carbon source and p-type doped source changed to needed for growth epitaxial structure
Setting value, and gas is added in the distribution mode selection according to exemplary epitaxial piece doping concentration under the process conditions along substrate diameter direction
The type of process gas in floating gas；
(5) after completing epitaxial structures growth, growth source and doped source is closed, reaction chamber temperature is cooled to room in hydrogen atmosphere
Temperature, reaction chamber temperature reaches hydrogen is discharged after room temperature after, repeatedly replaced by argon gas to reacting indoor gas, finally
After chamber pressure is inflated to atmospheric pressure with argon gas, begin to speak to take piece.
2. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：It is intermediate low when epitaxial wafer p-type doping concentration both sides height in the step (4), when being in bowl-shape distribution, and edge doping concentration
When no more than central point doping concentration 20%, silicon source is added in flotation gas, the silicon source flow added in flotation gas does not surpass
Cross the 15% of technique silicon source flow.
3. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：It is intermediate low when epitaxial wafer p-type doping concentration both sides height in the step (4), when being in bowl-shape distribution, and edge doping concentration
When more than central point doping concentration 20%, silicon source and hydrogen chloride, the silicon source added in flotation gas are added in flotation gas
Flow is no more than technique with the 15% of silicon source flow, and hydrogen chloride flow is no more than reative cell hydrogen flowing quantity 0.05%.
4. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：In the step (4), when epitaxial wafer p-type doping concentration both sides are low, intermediate high, when in the distribution of arch bridge shape, and edge doping is dense
When degree is more than central point doping concentration 20%, carbon source is added in flotation gas, the carbon source flow added in flotation gas is no more than
Technique is with the 15% of carbon source flow.
5. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：In the step (4), when epitaxial wafer p-type doping concentration both sides are low, intermediate high, when in the distribution of arch bridge shape, and edge doping is dense
When degree is more than central point doping concentration 20%, carbon source and trimethyl aluminium, the carbon source added in flotation gas are added in flotation gas
Flow is no more than technique with the 15% of carbon source flow, and trimethyl aluminium actual flow is no more than reative cell hydrogen flowing quantity 0.02%.
6. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：In the step (1), chooses and be biased to<11-20>The silicon face silicon carbide substrates in 4 ° or 8 ° of direction.
7. the method according to claim 1 for improving silicon carbide epitaxial wafer piece inner p-type doping concentration uniformity, feature exist
In：In the step (4), the silicon source is silane, dichloro hydrogen silicon, trichlorosilane or tetrachloro hydrogen silicon；The carbon source is methane, second
Alkene, acetylene or propane.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029245A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | SiC epitaxial rate switching method |
| CN111029250A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | Method for realizing SiC epitaxial curve-shaped doping distribution |
| CN111293037A (en) * | 2020-02-17 | 2020-06-16 | 启迪新材料(芜湖)有限公司 | P-type SiC epitaxy and growth method thereof |
| CN112490117A (en) * | 2020-12-08 | 2021-03-12 | 瀚天天成电子科技（厦门）有限公司 | Method for improving growth quality of silicon carbide epitaxial film |
| CN112853491A (en) * | 2020-12-31 | 2021-05-28 | 山西烁科晶体有限公司 | Doped silicon carbide single crystal and preparation method thereof |
| CN113564710A (en) * | 2021-07-19 | 2021-10-29 | 瀚天天成电子科技（厦门）有限公司 | Control method for silicon carbide epitaxial growth |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271172A (en) * | 1975-12-10 | 1977-06-14 | Tdk Corp | Growth of p type boron phosphide semiconductor |
| CN102592976A (en) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P-type heavily-doped silicon carbide film extension preparation method |
| CN103614779A (en) * | 2013-11-28 | 2014-03-05 | 中国电子科技集团公司第五十五研究所 | Method for increasing uniformity of on-chip n-type doping concentration of silicon carbide epitaxial wafer |
| CN106876258A (en) * | 2017-03-10 | 2017-06-20 | 东莞市天域半导体科技有限公司 | The preparation method and its growth chamber structure of super uniform doping large area SiC epitaxial layer |
| JP2017117996A (en) * | 2015-12-25 | 2017-06-29 | ルネサスエレクトロニクス株式会社 | Semiconductor device and semiconductor device manufacturing method |
-
2018
- 2018-05-04 CN CN201810418667.1A patent/CN108796616B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5271172A (en) * | 1975-12-10 | 1977-06-14 | Tdk Corp | Growth of p type boron phosphide semiconductor |
| CN102592976A (en) * | 2012-03-22 | 2012-07-18 | 西安电子科技大学 | P-type heavily-doped silicon carbide film extension preparation method |
| CN103614779A (en) * | 2013-11-28 | 2014-03-05 | 中国电子科技集团公司第五十五研究所 | Method for increasing uniformity of on-chip n-type doping concentration of silicon carbide epitaxial wafer |
| JP2017117996A (en) * | 2015-12-25 | 2017-06-29 | ルネサスエレクトロニクス株式会社 | Semiconductor device and semiconductor device manufacturing method |
| CN106876258A (en) * | 2017-03-10 | 2017-06-20 | 东莞市天域半导体科技有限公司 | The preparation method and its growth chamber structure of super uniform doping large area SiC epitaxial layer |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111029245A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | SiC epitaxial rate switching method |
| CN111029250A (en) * | 2019-12-09 | 2020-04-17 | 中国电子科技集团公司第五十五研究所 | Method for realizing SiC epitaxial curve-shaped doping distribution |
| CN111029250B (en) * | 2019-12-09 | 2022-07-22 | 中国电子科技集团公司第五十五研究所 | Method for realizing SiC epitaxial curve-shaped doping distribution |
| CN111029245B (en) * | 2019-12-09 | 2022-07-29 | 中国电子科技集团公司第五十五研究所 | SiC epitaxial rate switching method |
| CN111293037A (en) * | 2020-02-17 | 2020-06-16 | 启迪新材料(芜湖)有限公司 | P-type SiC epitaxy and growth method thereof |
| CN111293037B (en) * | 2020-02-17 | 2023-05-09 | 启迪微电子(芜湖)有限公司 | P-type SiC epitaxy and growth method thereof |
| CN112490117A (en) * | 2020-12-08 | 2021-03-12 | 瀚天天成电子科技（厦门）有限公司 | Method for improving growth quality of silicon carbide epitaxial film |
| CN112490117B (en) * | 2020-12-08 | 2021-08-10 | 瀚天天成电子科技（厦门）有限公司 | Method for improving growth quality of silicon carbide epitaxial film |
| CN112853491A (en) * | 2020-12-31 | 2021-05-28 | 山西烁科晶体有限公司 | Doped silicon carbide single crystal and preparation method thereof |
| CN113564710A (en) * | 2021-07-19 | 2021-10-29 | 瀚天天成电子科技（厦门）有限公司 | Control method for silicon carbide epitaxial growth |
| CN115595552A (en) * | 2022-12-16 | 2023-01-13 | 新美光（苏州）半导体科技有限公司（Cn） | Silicon carbide ring for plasma etching equipment and forming process of silicon carbide ring |
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