JPS6419714A - Growth method for gaas epitaxial layer - Google Patents
Growth method for gaas epitaxial layerInfo
- Publication number
- JPS6419714A JPS6419714A JP17472587A JP17472587A JPS6419714A JP S6419714 A JPS6419714 A JP S6419714A JP 17472587 A JP17472587 A JP 17472587A JP 17472587 A JP17472587 A JP 17472587A JP S6419714 A JPS6419714 A JP S6419714A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- gaas
- source
- gaas substrate
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To inhibit the generation of a misfit dislocation, and to obtain an epitaxial layer having excellent crystallizability by doping the epitaxial layer with In in a required quantity proportional to the quantity of In doped into a GaAs substrate. CONSTITUTION:When a GaAs epitaxial layer is grown onto a GaAs substrate 6, to which In is doped, through a chloride method, AsCl3 is introduced by a hydrogen carrier from a raw material gas nozzle 7, As is absorbed to a Ga source 5, and a GaAs clust is formed onto the surface of the Ga source 5. The clust is transported to the GaAs substrate 6 supported to a substrate holder 4, and epitaxial growth is started. A GaAs substrate, to which In in 2X10<20>cm<-3> is added and which is not dislocated, is used as said GaAs substrate 6, and In is added at the rate of 1g to the Ga source of 50g into said Ga source 5, thus acquiring the epitaxial layer, in which there is no misfit dislocation and which is composed of GaAs, through epitaxial growth.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17472587A JPS6419714A (en) | 1987-07-15 | 1987-07-15 | Growth method for gaas epitaxial layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17472587A JPS6419714A (en) | 1987-07-15 | 1987-07-15 | Growth method for gaas epitaxial layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6419714A true JPS6419714A (en) | 1989-01-23 |
Family
ID=15983564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17472587A Pending JPS6419714A (en) | 1987-07-15 | 1987-07-15 | Growth method for gaas epitaxial layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6419714A (en) |
-
1987
- 1987-07-15 JP JP17472587A patent/JPS6419714A/en active Pending
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