JPS6442815A - Compound semiconductor crystal growth method - Google Patents

Compound semiconductor crystal growth method

Info

Publication number
JPS6442815A
JPS6442815A JP19942987A JP19942987A JPS6442815A JP S6442815 A JPS6442815 A JP S6442815A JP 19942987 A JP19942987 A JP 19942987A JP 19942987 A JP19942987 A JP 19942987A JP S6442815 A JPS6442815 A JP S6442815A
Authority
JP
Japan
Prior art keywords
crystal
doped
substrate
diffusion
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19942987A
Other languages
Japanese (ja)
Inventor
Akira Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19942987A priority Critical patent/JPS6442815A/en
Publication of JPS6442815A publication Critical patent/JPS6442815A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To obtain a stable crystal which is influenced by diffusion of substrate Zn by growing a crystal after forming a GaAs layer which is doped with Mg on a Zn doped GaAs substrate. CONSTITUTION:A GaAs layer 9 which is doped with Mg is formed on a Zn doped GaAs substrate 1 as a buffer layer for suppressing diffusion of Zn and a requested crystal 2 is allowed to grow on this. At this time, a concentration ranging from 1X10<17>cm<-3> to 1X10<19>cm<-3> is specified, which will not produce any problem in terms of electrical property and crystal property. Thus, the Mg doped P-type layer suppresses diffusion of Zn from the substrate and prevents the carrier profile on the crystal 2 which is formed on it from being disturbed. It allows a crystal with stable device property and improved reliability to be created.
JP19942987A 1987-08-10 1987-08-10 Compound semiconductor crystal growth method Pending JPS6442815A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19942987A JPS6442815A (en) 1987-08-10 1987-08-10 Compound semiconductor crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19942987A JPS6442815A (en) 1987-08-10 1987-08-10 Compound semiconductor crystal growth method

Publications (1)

Publication Number Publication Date
JPS6442815A true JPS6442815A (en) 1989-02-15

Family

ID=16407667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19942987A Pending JPS6442815A (en) 1987-08-10 1987-08-10 Compound semiconductor crystal growth method

Country Status (1)

Country Link
JP (1) JPS6442815A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9028179B2 (en) 2009-06-11 2015-05-12 Tungaloy Corporation Drilling tool

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9028179B2 (en) 2009-06-11 2015-05-12 Tungaloy Corporation Drilling tool

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