JPS6442815A - Compound semiconductor crystal growth method - Google Patents
Compound semiconductor crystal growth methodInfo
- Publication number
- JPS6442815A JPS6442815A JP19942987A JP19942987A JPS6442815A JP S6442815 A JPS6442815 A JP S6442815A JP 19942987 A JP19942987 A JP 19942987A JP 19942987 A JP19942987 A JP 19942987A JP S6442815 A JPS6442815 A JP S6442815A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- doped
- substrate
- diffusion
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE:To obtain a stable crystal which is influenced by diffusion of substrate Zn by growing a crystal after forming a GaAs layer which is doped with Mg on a Zn doped GaAs substrate. CONSTITUTION:A GaAs layer 9 which is doped with Mg is formed on a Zn doped GaAs substrate 1 as a buffer layer for suppressing diffusion of Zn and a requested crystal 2 is allowed to grow on this. At this time, a concentration ranging from 1X10<17>cm<-3> to 1X10<19>cm<-3> is specified, which will not produce any problem in terms of electrical property and crystal property. Thus, the Mg doped P-type layer suppresses diffusion of Zn from the substrate and prevents the carrier profile on the crystal 2 which is formed on it from being disturbed. It allows a crystal with stable device property and improved reliability to be created.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19942987A JPS6442815A (en) | 1987-08-10 | 1987-08-10 | Compound semiconductor crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19942987A JPS6442815A (en) | 1987-08-10 | 1987-08-10 | Compound semiconductor crystal growth method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6442815A true JPS6442815A (en) | 1989-02-15 |
Family
ID=16407667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19942987A Pending JPS6442815A (en) | 1987-08-10 | 1987-08-10 | Compound semiconductor crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6442815A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9028179B2 (en) | 2009-06-11 | 2015-05-12 | Tungaloy Corporation | Drilling tool |
-
1987
- 1987-08-10 JP JP19942987A patent/JPS6442815A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9028179B2 (en) | 2009-06-11 | 2015-05-12 | Tungaloy Corporation | Drilling tool |
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