JPS5783072A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5783072A JPS5783072A JP14687681A JP14687681A JPS5783072A JP S5783072 A JPS5783072 A JP S5783072A JP 14687681 A JP14687681 A JP 14687681A JP 14687681 A JP14687681 A JP 14687681A JP S5783072 A JPS5783072 A JP S5783072A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- forbidden zone
- junction
- layer
- grows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 230000031700 light absorption Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000005204 segregation Methods 0.000 abstract 1
- 238000010583 slow cooling Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To cause light to emit perpendicularly to the junction by a method wherein films of a layer of ingredient elements containing a p type compound with a crystal mixing ratio of x and a layer of an n type compound of mixed crystals are epitaxially formed and the forbidden zone is minimized at the border between the p and n layers. CONSTITUTION:When the temperature of a p type solution on a p<+> GaAs substrate 1 is gradually cooled down, a pGa1-xAlxAs 2 film created by Al segregation, whose rate of growth depends upon temperature, grows thicker, while Al lessens in quantity and the forbidden zone grows smaller. Next, the Al compnent is made in quantity as large as y which is larger than x and, when the substrate establishes contact with an n type solution, the Al component grows again. This results in the formation of nGa1-yAlyAs 3 with a pn junction constituted at the location of the least Al or of the smallest forbidden zone. When the forbidden zone in a layer grown farther from the substrate 1 is made larger than that in a layer grown nearer to the substrate reduces the absorption of light that goes in the direction perpendicular to the junction. Further, the n<+> GaAs 4 is made into a thin film by slow cooling and the electrodes are formed into a lattices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14687681A JPS5783072A (en) | 1981-09-17 | 1981-09-17 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14687681A JPS5783072A (en) | 1981-09-17 | 1981-09-17 | Light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5783072A true JPS5783072A (en) | 1982-05-24 |
Family
ID=15417560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14687681A Pending JPS5783072A (en) | 1981-09-17 | 1981-09-17 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5783072A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068416A2 (en) * | 1981-06-24 | 1983-01-05 | Siemens Aktiengesellschaft | Luminescent diode with high efficiency and high modulation frequency limit |
-
1981
- 1981-09-17 JP JP14687681A patent/JPS5783072A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0068416A2 (en) * | 1981-06-24 | 1983-01-05 | Siemens Aktiengesellschaft | Luminescent diode with high efficiency and high modulation frequency limit |
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