JPS568815A - Method of growing of compound semiconductor in vapor phase epitaxial film - Google Patents
Method of growing of compound semiconductor in vapor phase epitaxial filmInfo
- Publication number
- JPS568815A JPS568815A JP8362979A JP8362979A JPS568815A JP S568815 A JPS568815 A JP S568815A JP 8362979 A JP8362979 A JP 8362979A JP 8362979 A JP8362979 A JP 8362979A JP S568815 A JPS568815 A JP S568815A
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- substrate
- layer
- temperature
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02461—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/0251—Graded layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain an epitaxial film having less crystal defect by eliminating simultaneous change of the temperature of a monocrystalline substrate and a reaction gas composition and sufficiently accelerating the growing speed of a gradient layer. CONSTITUTION:The monocryastlline substrate of gallium arsenide, gallium phosphide or the like is set, for example, in a range of 900-970 deg.C to form the first epitaxial layer having 0 or 1 or mixed crystal ratio. Then, the substrate is abruptly decreased at its temperature to 760-870 deg.C to form the second epitaxial layer having the same mixed crystal ratio as that of the first epitaxial layer. Subsequently, the third epitaxial layer, that is, a gradient layer is grown while retaining the temperature of the substrate, and after the mixed crystal ratio reaches prescribed value, the fourth epitaxial layer, that is, an operational layer is grown. In this manner, the growing speed of the gradient layer is sufficiently accelerated without changing simultaneously the temperature of the substrate and the reaction gas composition, thereby obtaining an epitaxial layer having less crystal defects.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8362979A JPS568815A (en) | 1979-07-02 | 1979-07-02 | Method of growing of compound semiconductor in vapor phase epitaxial film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8362979A JPS568815A (en) | 1979-07-02 | 1979-07-02 | Method of growing of compound semiconductor in vapor phase epitaxial film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS568815A true JPS568815A (en) | 1981-01-29 |
JPS5756203B2 JPS5756203B2 (en) | 1982-11-29 |
Family
ID=13807754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8362979A Granted JPS568815A (en) | 1979-07-02 | 1979-07-02 | Method of growing of compound semiconductor in vapor phase epitaxial film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS568815A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5322808A (en) * | 1991-08-21 | 1994-06-21 | Hughes Aircraft Company | Method of fabricating inverted modulation-doped heterostructure |
US6543225B2 (en) | 2001-07-20 | 2003-04-08 | Scuderi Group Llc | Split four stroke cycle internal combustion engine |
US6722127B2 (en) | 2001-07-20 | 2004-04-20 | Carmelo J. Scuderi | Split four stroke engine |
US6952923B2 (en) | 2003-06-20 | 2005-10-11 | Branyon David P | Split-cycle four-stroke engine |
US6986329B2 (en) | 2003-07-23 | 2006-01-17 | Scuderi Salvatore C | Split-cycle engine with dwell piston motion |
-
1979
- 1979-07-02 JP JP8362979A patent/JPS568815A/en active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5322808A (en) * | 1991-08-21 | 1994-06-21 | Hughes Aircraft Company | Method of fabricating inverted modulation-doped heterostructure |
US7017536B2 (en) | 2001-07-20 | 2006-03-28 | Scuderi Carmelo J | Split four stroke engine |
US6543225B2 (en) | 2001-07-20 | 2003-04-08 | Scuderi Group Llc | Split four stroke cycle internal combustion engine |
US6609371B2 (en) | 2001-07-20 | 2003-08-26 | Scuderi Group Llc | Split four stroke engine |
US6722127B2 (en) | 2001-07-20 | 2004-04-20 | Carmelo J. Scuderi | Split four stroke engine |
US6880502B2 (en) | 2001-07-20 | 2005-04-19 | Carmelo J. Scuderi | Split four stroke engine |
US7628126B2 (en) | 2001-07-20 | 2009-12-08 | Scuderi Group, Llc | Split four stroke engine |
US7588001B2 (en) | 2003-06-20 | 2009-09-15 | Scuderi Group, Llc | Split-cycle four-stroke engine |
US6952923B2 (en) | 2003-06-20 | 2005-10-11 | Branyon David P | Split-cycle four-stroke engine |
US7810459B2 (en) | 2003-06-20 | 2010-10-12 | Scuderi Group, Llc | Split-cycle four-stroke engine |
US8006656B2 (en) | 2003-06-20 | 2011-08-30 | Scuderi Group, Llc | Split-cycle four-stroke engine |
US7121236B2 (en) | 2003-07-23 | 2006-10-17 | Scuderi Salvatore C | Split-cycle engine with dwell piston motion |
US6986329B2 (en) | 2003-07-23 | 2006-01-17 | Scuderi Salvatore C | Split-cycle engine with dwell piston motion |
Also Published As
Publication number | Publication date |
---|---|
JPS5756203B2 (en) | 1982-11-29 |
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