JPS5622700A - Mixed crystal growing method - Google Patents
Mixed crystal growing methodInfo
- Publication number
- JPS5622700A JPS5622700A JP9574479A JP9574479A JPS5622700A JP S5622700 A JPS5622700 A JP S5622700A JP 9574479 A JP9574479 A JP 9574479A JP 9574479 A JP9574479 A JP 9574479A JP S5622700 A JPS5622700 A JP S5622700A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- gaalas
- layer
- substrate
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To grow a high quality mixed crystal of GaAlAs crystal, etc. by introducing vapor of an organometallic compound of Al in the vapor phase epitaxial growth of GaAs using Ga and AsCl3 as starting materials.
CONSTITUTION: In case of the double heteroepitaxial growth of GaAlAs and GaAs, Ga 12 saturated with As and substrate GaAs 13 are heated to each predetermined temp. By opening valves 2, 3, H2 gas is fed to AsCl3 saturator 9 kept at 0°C at a predetermined flow rate with flow meter 7 to start the epitaxial growth of GaAs on substrate 13. When GaAs of a required thickness is grown, valves 5, 6 are opened to introduce 18 vapor of an Al-contg. compound into reaction tube 11 with flow meter 8 through Al(CH3)3 saturator 10 kept at 25°C. After growing a GaAlAs layer of a predetermined thickness of substrate 13, on the layer a GaAs layer is grown again to grow a GaAlAs-GaAs double heteroepitaxial layer.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574479A JPS5622700A (en) | 1979-07-27 | 1979-07-27 | Mixed crystal growing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9574479A JPS5622700A (en) | 1979-07-27 | 1979-07-27 | Mixed crystal growing method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5622700A true JPS5622700A (en) | 1981-03-03 |
Family
ID=14145992
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9574479A Pending JPS5622700A (en) | 1979-07-27 | 1979-07-27 | Mixed crystal growing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5622700A (en) |
-
1979
- 1979-07-27 JP JP9574479A patent/JPS5622700A/en active Pending
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