JPS54133889A - Manufacture of gallium-phosphide green luminous element - Google Patents

Abstract

PURPOSE: To improve luminescence efficiency by making it possible to add N atoms of high concentration by lowering the donor concentration of a n-type GaP epitaxial layer uniformly with good reproducibility.

CONSTITUTION: One part of n-type GaP substrate crystal with S added is dissolved in a Ga solution which does not contain donor impurities substantially and at this time, the donor concentration at the circumference of the junction of the n epitaxial layer is prescribed by S taken into the Ga solution. At the circumference of a crystal- growth starting part where crystal is easy to change into a p type, it is made possible to add N atomo of high concentration to the pn junction circuimference effective for luminescense substantially, by positively making use of residual Si donor impurities mixing from the outside of the substrate. In order to make it possile to control the donor concentration finely in that way, almost all part of the boat material where the Ga solution comes in contact is made of quartz as to a supply for residual Si donors, and at least one part of the process should be in an atmosphere of H₂ for the purpose of removing adsorptive gas from a system making epitaxial growth. Consequently, a green GaP element can be obtained which is high in luminescence efficiency.

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