JPS5254385A - Production of semiconductor light emitting device - Google Patents
Production of semiconductor light emitting deviceInfo
- Publication number
- JPS5254385A JPS5254385A JP13009975A JP13009975A JPS5254385A JP S5254385 A JPS5254385 A JP S5254385A JP 13009975 A JP13009975 A JP 13009975A JP 13009975 A JP13009975 A JP 13009975A JP S5254385 A JPS5254385 A JP S5254385A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- semiconductor light
- production
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To let lattice constants coincide and obtain the growth layer of a semiconductor light emitting device free from dislocation by specifying growth temperature and the composition of X and Y in liquid-growing Ga1-XAlXAs1-YPY single crystal on Ga1-ZAlZAs single crystal.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13009975A JPS5254385A (en) | 1975-10-29 | 1975-10-29 | Production of semiconductor light emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13009975A JPS5254385A (en) | 1975-10-29 | 1975-10-29 | Production of semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5254385A true JPS5254385A (en) | 1977-05-02 |
JPS5729041B2 JPS5729041B2 (en) | 1982-06-21 |
Family
ID=15025912
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13009975A Granted JPS5254385A (en) | 1975-10-29 | 1975-10-29 | Production of semiconductor light emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5254385A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533597U (en) * | 1979-09-06 | 1980-03-04 |
-
1975
- 1975-10-29 JP JP13009975A patent/JPS5254385A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5533597U (en) * | 1979-09-06 | 1980-03-04 | ||
JPS5533752Y2 (en) * | 1979-09-06 | 1980-08-11 |
Also Published As
Publication number | Publication date |
---|---|
JPS5729041B2 (en) | 1982-06-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS51123561A (en) | Production method of semicondvctor device | |
JPS5423386A (en) | Manufacture of semiconductor device | |
JPS5254385A (en) | Production of semiconductor light emitting device | |
JPS5245273A (en) | Method for production of semiconductor device | |
JPS52152184A (en) | Semiconductor device | |
JPS52143761A (en) | Crystal growth method | |
JPS53104162A (en) | Forming method for epitaxial layer on semiconductor wafer | |
JPS526093A (en) | Production method of semiconductor device | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5328374A (en) | Wafer production | |
JPS5258363A (en) | Formation of semiconductor layer | |
JPS5263088A (en) | Production of gaas light emitting diode | |
JPS5273673A (en) | Production of semiconductor device | |
JPS5436192A (en) | Manufacture for semiconductor | |
JPS52143767A (en) | Production of semiconductor device | |
JPS5416177A (en) | Crystal growth method | |
JPS5249786A (en) | Semiconductor light coupling device | |
JPS5249766A (en) | Apparatus for producing semiconductor crystal | |
JPS52127189A (en) | Semiconductor device | |
JPS5229186A (en) | Photosemiconductor device | |
JPS5348459A (en) | Production of semiconductor device | |
JPS5386171A (en) | Production of transistor | |
JPS5232669A (en) | Liquid-phase epitaxial growth method | |
JPS5330885A (en) | Production of semiconductor light emitting element | |
JPS5294069A (en) | Process for preparing semi-conductor substrate |