JPS5348459A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5348459A
JPS5348459A JP12360676A JP12360676A JPS5348459A JP S5348459 A JPS5348459 A JP S5348459A JP 12360676 A JP12360676 A JP 12360676A JP 12360676 A JP12360676 A JP 12360676A JP S5348459 A JPS5348459 A JP S5348459A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
fabricating
melt
cover member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12360676A
Other languages
Japanese (ja)
Inventor
Toshio Tanaka
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12360676A priority Critical patent/JPS5348459A/en
Publication of JPS5348459A publication Critical patent/JPS5348459A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To make an epitaxially grown layer having a uniform thickness distribution by fabricating a cover member to provide a height distribution to melt.
COPYRIGHT: (C)1978,JPO&Japio
JP12360676A 1976-10-14 1976-10-14 Production of semiconductor device Pending JPS5348459A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12360676A JPS5348459A (en) 1976-10-14 1976-10-14 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12360676A JPS5348459A (en) 1976-10-14 1976-10-14 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5348459A true JPS5348459A (en) 1978-05-01

Family

ID=14864764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12360676A Pending JPS5348459A (en) 1976-10-14 1976-10-14 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5348459A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577141A (en) * 1978-12-07 1980-06-10 Nec Corp Etching method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5577141A (en) * 1978-12-07 1980-06-10 Nec Corp Etching method
JPS6346572B2 (en) * 1978-12-07 1988-09-16 Nippon Electric Co

Similar Documents

Publication Publication Date Title
JPS5320767A (en) X-ray mask supporting underlayer and its production
JPS5423386A (en) Manufacture of semiconductor device
JPS5348459A (en) Production of semiconductor device
JPS5363871A (en) Production of semiconductor device
JPS52143761A (en) Crystal growth method
JPS524167A (en) Manufacturing process of p-n junction type solid element
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5282087A (en) Production of solar cell
JPS5390763A (en) Semiconductor element and mask for producing semiconductor element
JPS5422171A (en) Manufacture of semiconductor device
JPS5275276A (en) Production of semiconductor device
JPS53132260A (en) Production of semiconductor device
JPS5217768A (en) Production method of semi-conductor device
JPS5384691A (en) Production of semiconductor device
JPS5329668A (en) Production of semiconductor device
JPS52155189A (en) Multiple layer crystal growth
JPS5220774A (en) Manufacturing method of variable capacitance element
JPS5312418A (en) Production of coating preparation
JPS52154346A (en) Preparation of semiconductor crystal
JPS5432983A (en) Manufacture of semiconductor device
JPS5397771A (en) Semiconductor device
JPS5397769A (en) Production of semiconductor device
JPS5366163A (en) Selective growth method of semiconductor buried layer
JPS5386171A (en) Production of transistor
JPS5397770A (en) Production of semiconductor device