Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co LtdfiledCriticalToshiba Corp
Priority to JP1214577ApriorityCriticalpatent/JPS5397769A/en
Publication of JPS5397769ApublicationCriticalpatent/JPS5397769A/en
PURPOSE: To make a semiconductor device of desired characteristics by covering the channel produced right under insulation film with the poly-Si layer formed at a low temperature.
COPYRIGHT: (C)1978,JPO&Japio
JP1214577A1977-02-081977-02-08Production of semiconductor device
PendingJPS5397769A
(en)