JPS5458379A - Avalanche diode - Google Patents
Avalanche diodeInfo
- Publication number
- JPS5458379A JPS5458379A JP12556777A JP12556777A JPS5458379A JP S5458379 A JPS5458379 A JP S5458379A JP 12556777 A JP12556777 A JP 12556777A JP 12556777 A JP12556777 A JP 12556777A JP S5458379 A JPS5458379 A JP S5458379A
- Authority
- JP
- Japan
- Prior art keywords
- gaas
- oscillation
- diode
- avalanche
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To establish the oscillation of high efficiency with lower operation voltage than conventional GaAs homo junction diodes, by forming the hetero junction diode taking the drift region to GaAs and the avalanche region as Fe.
CONSTITUTION: On the n++ GaAs 1, the n Ge layer 4 and p++ Ge layer 5 of 0.1 to 0.3μm, and n+ GaAs layer 3 1 to 10μm including donor of concentration 1×(1014 to 1015) are formed. When the inverse voltage is applied to the diode, avalanche is caused from the crystal internal electric field, causing microwave oscillation. When the DC voltage drop is Va for the avalanche region and Vd for the drift region, the oscillation efficiency of diode is increased as smaller Va/Vd. When the drift region is nGaAs, the efficiency is expressed as η=2/πx (Vd/Va+Vd). When Ge-GaAs hetero junction, Va/Vd≈1.1η≈0.3, and the operation voltage is less than conventional methods and the oscillation of high efficiency can be made
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556777A JPS5458379A (en) | 1977-10-18 | 1977-10-18 | Avalanche diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12556777A JPS5458379A (en) | 1977-10-18 | 1977-10-18 | Avalanche diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5458379A true JPS5458379A (en) | 1979-05-11 |
Family
ID=14913378
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12556777A Pending JPS5458379A (en) | 1977-10-18 | 1977-10-18 | Avalanche diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5458379A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150873A (en) * | 1980-04-22 | 1981-11-21 | Semiconductor Res Found | Ultrahigh frequency semiconductor device |
JPH028059U (en) * | 1989-06-15 | 1990-01-18 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
-
1977
- 1977-10-18 JP JP12556777A patent/JPS5458379A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3466512A (en) * | 1967-05-29 | 1969-09-09 | Bell Telephone Labor Inc | Impact avalanche transit time diodes with heterojunction structure |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56150873A (en) * | 1980-04-22 | 1981-11-21 | Semiconductor Res Found | Ultrahigh frequency semiconductor device |
JPH028059U (en) * | 1989-06-15 | 1990-01-18 | ||
JPH051085Y2 (en) * | 1989-06-15 | 1993-01-12 |
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