JPS5458379A - Avalanche diode - Google Patents

Avalanche diode

Info

Publication number
JPS5458379A
JPS5458379A JP12556777A JP12556777A JPS5458379A JP S5458379 A JPS5458379 A JP S5458379A JP 12556777 A JP12556777 A JP 12556777A JP 12556777 A JP12556777 A JP 12556777A JP S5458379 A JPS5458379 A JP S5458379A
Authority
JP
Japan
Prior art keywords
gaas
oscillation
diode
avalanche
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12556777A
Other languages
Japanese (ja)
Inventor
Masumi Takeshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP12556777A priority Critical patent/JPS5458379A/en
Publication of JPS5458379A publication Critical patent/JPS5458379A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To establish the oscillation of high efficiency with lower operation voltage than conventional GaAs homo junction diodes, by forming the hetero junction diode taking the drift region to GaAs and the avalanche region as Fe.
CONSTITUTION: On the n++ GaAs 1, the n Ge layer 4 and p++ Ge layer 5 of 0.1 to 0.3μm, and n+ GaAs layer 3 1 to 10μm including donor of concentration 1×(1014 to 1015) are formed. When the inverse voltage is applied to the diode, avalanche is caused from the crystal internal electric field, causing microwave oscillation. When the DC voltage drop is Va for the avalanche region and Vd for the drift region, the oscillation efficiency of diode is increased as smaller Va/Vd. When the drift region is nGaAs, the efficiency is expressed as η=2/πx (Vd/Va+Vd). When Ge-GaAs hetero junction, Va/Vd≈1.1η≈0.3, and the operation voltage is less than conventional methods and the oscillation of high efficiency can be made
COPYRIGHT: (C)1979,JPO&Japio
JP12556777A 1977-10-18 1977-10-18 Avalanche diode Pending JPS5458379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12556777A JPS5458379A (en) 1977-10-18 1977-10-18 Avalanche diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12556777A JPS5458379A (en) 1977-10-18 1977-10-18 Avalanche diode

Publications (1)

Publication Number Publication Date
JPS5458379A true JPS5458379A (en) 1979-05-11

Family

ID=14913378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12556777A Pending JPS5458379A (en) 1977-10-18 1977-10-18 Avalanche diode

Country Status (1)

Country Link
JP (1) JPS5458379A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150873A (en) * 1980-04-22 1981-11-21 Semiconductor Res Found Ultrahigh frequency semiconductor device
JPH028059U (en) * 1989-06-15 1990-01-18

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466512A (en) * 1967-05-29 1969-09-09 Bell Telephone Labor Inc Impact avalanche transit time diodes with heterojunction structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56150873A (en) * 1980-04-22 1981-11-21 Semiconductor Res Found Ultrahigh frequency semiconductor device
JPH028059U (en) * 1989-06-15 1990-01-18
JPH051085Y2 (en) * 1989-06-15 1993-01-12

Similar Documents

Publication Publication Date Title
JPS5422179A (en) Semiconductor switching element
JPS5458379A (en) Avalanche diode
JPS5524482A (en) Mono-cyrstalline silicon
JPS5382179A (en) Field effect transistor
JPS5376676A (en) High breakdown voltage field effect power transistor
JPS5366384A (en) Thyristor
Kuvas et al. Heterojunction IMPATT diodes-Theoretical performance and material development studies
JPS5778171A (en) Thyristor
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS6490561A (en) Semiconductor device
JPS55103756A (en) Electrostatic induction transistor integrated circuit
JPS5421286A (en) Reverse conductor thyristor
JPS5368174A (en) Lateral transistor
JPS5322383A (en) Iil simiconductor device
JPS54156491A (en) Complementary field effect semiconductor device
JPS5339889A (en) Semiconductor device and its production
JPS5348488A (en) Field effect transistor
JPS5395585A (en) Reverse conducting thyristor
JPS51142280A (en) Gate turn-off thyristor
JPS5232677A (en) Schottky barrier diode
JPS5541713A (en) Semiconductor laser device
JPS52104072A (en) High voltage semiconductor device
JPS537179A (en) Thyristor
JPS5745283A (en) Semiconductor device
JPS5683085A (en) Luminous semiconductor device and its manufacture