JPS5395585A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS5395585A
JPS5395585A JP1035577A JP1035577A JPS5395585A JP S5395585 A JPS5395585 A JP S5395585A JP 1035577 A JP1035577 A JP 1035577A JP 1035577 A JP1035577 A JP 1035577A JP S5395585 A JPS5395585 A JP S5395585A
Authority
JP
Japan
Prior art keywords
reverse conducting
conducting thyristor
thyristor
boundary
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1035577A
Other languages
Japanese (ja)
Other versions
JPS593867B2 (en
Inventor
Tsutomu Nakagawa
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1035577A priority Critical patent/JPS593867B2/en
Publication of JPS5395585A publication Critical patent/JPS5395585A/en
Publication of JPS593867B2 publication Critical patent/JPS593867B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase the commutation capability and to reduce the ON voltage and OFF current, by forming the N<+>P junction constituting reverse conducting thyristor at deeper position than the boundary of the epitaxial grown layer and Si substrate.
JP1035577A 1977-02-01 1977-02-01 reverse conducting thyristor Expired JPS593867B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1035577A JPS593867B2 (en) 1977-02-01 1977-02-01 reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1035577A JPS593867B2 (en) 1977-02-01 1977-02-01 reverse conducting thyristor

Publications (2)

Publication Number Publication Date
JPS5395585A true JPS5395585A (en) 1978-08-21
JPS593867B2 JPS593867B2 (en) 1984-01-26

Family

ID=11747862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1035577A Expired JPS593867B2 (en) 1977-02-01 1977-02-01 reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS593867B2 (en)

Also Published As

Publication number Publication date
JPS593867B2 (en) 1984-01-26

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