JPS5541713A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5541713A
JPS5541713A JP11399678A JP11399678A JPS5541713A JP S5541713 A JPS5541713 A JP S5541713A JP 11399678 A JP11399678 A JP 11399678A JP 11399678 A JP11399678 A JP 11399678A JP S5541713 A JPS5541713 A JP S5541713A
Authority
JP
Japan
Prior art keywords
layer
lock
type
active layer
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11399678A
Other languages
Japanese (ja)
Inventor
Yoshiharu Horikoshi
Takashi Fukui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11399678A priority Critical patent/JPS5541713A/en
Publication of JPS5541713A publication Critical patent/JPS5541713A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE: To extend the life time of laser function by protecting unnecessary current flow into junction part with setting the semiconductor laser device and first lock-in layer as n or p-type and the active layer and second layer as the opposite P or N- type.
CONSTITUTION: The first lock-in layer 2, the active layer 3 of In1-XGaXASYP1-Y (but, 0.05≤X≤0.47 and 0.1≤Y≤1) and the second lock-in layer 4 of InP are formed orderly on the InP base with liquid phase epitaxial growing method, and further, the electrodes 5 and 6 are formed on the opposite side to the lock-in layer 2 of base 1 and the opposite side to the active layer 3 of lock-in layer 4. To the case of the base 1 and the lock-in layer 2 being N or P-type, the active layer 3 and the lock-in layer 4 are set to the opposite p or n-type. With this method of stopping unnecessary current flow into the junction part 7, the life time of laser function is able to extend.
COPYRIGHT: (C)1980,JPO&Japio
JP11399678A 1978-09-16 1978-09-16 Semiconductor laser device Pending JPS5541713A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11399678A JPS5541713A (en) 1978-09-16 1978-09-16 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11399678A JPS5541713A (en) 1978-09-16 1978-09-16 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5541713A true JPS5541713A (en) 1980-03-24

Family

ID=14626438

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11399678A Pending JPS5541713A (en) 1978-09-16 1978-09-16 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5541713A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128752A (en) * 1981-02-02 1982-08-10 Nippon Shokubai Kagaku Kogyo Co Ltd Metal surface treating agent composition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4971885A (en) * 1973-09-21 1974-07-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128752A (en) * 1981-02-02 1982-08-10 Nippon Shokubai Kagaku Kogyo Co Ltd Metal surface treating agent composition
JPS6146021B2 (en) * 1981-02-02 1986-10-11 Nippon Shokubai Kagaku Kogyo Kk

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