JPS5588371A - Preparation of schottky barrier diode using gallium arsenide - Google Patents
Preparation of schottky barrier diode using gallium arsenideInfo
- Publication number
- JPS5588371A JPS5588371A JP16602178A JP16602178A JPS5588371A JP S5588371 A JPS5588371 A JP S5588371A JP 16602178 A JP16602178 A JP 16602178A JP 16602178 A JP16602178 A JP 16602178A JP S5588371 A JPS5588371 A JP S5588371A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- protecting film
- gallium arsenide
- main component
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To stabilize the state of a boundary face between a substrate and a protecting film and prevent the drop of reverse withstanding voltage by growing a surface protecting film whose main component is arsenic or gallium on a gallium arsenide substrate on which electrodes are formed.
CONSTITUTION: After forming an epitaxial layer 11 on a gallium arsenide substrate 10, etching grooves 12 are cut to form a mesa part 13, and further, in the etching grooves 12 and on the top of the mesa part, ohmic electrodes 15 and a Schottky electrode 14 are formed respectively, Next, a surface protecting film 16 whose main component is arsenic oxides is formed on the substrate 10 by the methods of plasma oxidation, thermal oxidation in hydrogen peroxide solution, etc. The surface protecting film 16 may be that whose main component is gallium oxides formed by anodic oxidation method. Then coating polyimide resin 17 and forming contact electrodes 18, the substrate 10 is formed into a prescribed form by etching.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16602178A JPS5588371A (en) | 1978-12-26 | 1978-12-26 | Preparation of schottky barrier diode using gallium arsenide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16602178A JPS5588371A (en) | 1978-12-26 | 1978-12-26 | Preparation of schottky barrier diode using gallium arsenide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5588371A true JPS5588371A (en) | 1980-07-04 |
Family
ID=15823443
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16602178A Pending JPS5588371A (en) | 1978-12-26 | 1978-12-26 | Preparation of schottky barrier diode using gallium arsenide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5588371A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0538682A2 (en) * | 1991-10-25 | 1993-04-28 | International Business Machines Corporation | Oxygen assisted ohmic contact formation to N-type gallium arsenide |
| JPH06176211A (en) * | 1992-09-14 | 1994-06-24 | Teiriyou Sangyo Kk | Identification code paper |
| JPH07146910A (en) * | 1993-06-25 | 1995-06-06 | Teiriyou Sangyo Kk | Optical readable binary code |
| CN103245612A (en) * | 2012-02-13 | 2013-08-14 | 台湾积体电路制造股份有限公司 | Biological sensing structures and methods of forming the same |
-
1978
- 1978-12-26 JP JP16602178A patent/JPS5588371A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0538682A2 (en) * | 1991-10-25 | 1993-04-28 | International Business Machines Corporation | Oxygen assisted ohmic contact formation to N-type gallium arsenide |
| EP0538682A3 (en) * | 1991-10-25 | 1994-01-19 | Ibm | |
| US5317190A (en) * | 1991-10-25 | 1994-05-31 | International Business Machines Corporation | Oxygen assisted ohmic contact formation to N-type gallium arsenide |
| JPH06176211A (en) * | 1992-09-14 | 1994-06-24 | Teiriyou Sangyo Kk | Identification code paper |
| JPH07146910A (en) * | 1993-06-25 | 1995-06-06 | Teiriyou Sangyo Kk | Optical readable binary code |
| CN103245612A (en) * | 2012-02-13 | 2013-08-14 | 台湾积体电路制造股份有限公司 | Biological sensing structures and methods of forming the same |
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