JPS5484979A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5484979A
JPS5484979A JP15324577A JP15324577A JPS5484979A JP S5484979 A JPS5484979 A JP S5484979A JP 15324577 A JP15324577 A JP 15324577A JP 15324577 A JP15324577 A JP 15324577A JP S5484979 A JPS5484979 A JP S5484979A
Authority
JP
Japan
Prior art keywords
layer
film
pattern
etching
lattice defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15324577A
Other languages
Japanese (ja)
Inventor
Tanji Ookawa
Akihiro Shibatomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15324577A priority Critical patent/JPS5484979A/en
Publication of JPS5484979A publication Critical patent/JPS5484979A/en
Pending legal-status Critical Current

Links

Landscapes

  • Weting (AREA)

Abstract

PURPOSE: To control acurately the depth of side etching to obtain a minute pattern by utilizing that the etching speed is high in a region where lattice defects are generated by ion injection.
CONSTITUTION: N-type epi-layer 22, Pt layer 23 and Si3N4 layer 24 are caused to adhere onto semi-insulation-property GaAs substrate 21 by lamination, and pattern 25 of a photo resistor film is formed on them. Next, He ions having prescribed energy are injected to reach Pt layer 23, and is caused to advance in the lateral direction by the distance of approximately 30 % of the injection depth, thereby generating lattice defects there. Thus, the part of film 24 with a prescribed distance from the edge of pattern 25 is converted to film 24' including lattice defects, and film 24' where the etching speed becomes high is etched and removed by using mixed acid of HF and NH4F. After that, Au-Ge alloy layer 26 and Mo layer 27 are laminated throughout the surface and are covered with a film, and pattern 25 as well as layers 26 and 27 above pattern 25 are removed, and the exposed part of layer 23 is removed by sputter etching. Next, the exposed part of layer 24 is also removed by chemical etching, thereby making a FET.
COPYRIGHT: (C)1979,JPO&Japio
JP15324577A 1977-12-20 1977-12-20 Production of semiconductor device Pending JPS5484979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15324577A JPS5484979A (en) 1977-12-20 1977-12-20 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15324577A JPS5484979A (en) 1977-12-20 1977-12-20 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5484979A true JPS5484979A (en) 1979-07-06

Family

ID=15558223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15324577A Pending JPS5484979A (en) 1977-12-20 1977-12-20 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5484979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927542A (en) * 1982-08-06 1984-02-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927542A (en) * 1982-08-06 1984-02-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
JPS5636143A (en) Manufacture of semiconductor device
JPS56144577A (en) Production of semiconductor device
JPS5484979A (en) Production of semiconductor device
JPS5331983A (en) Production of semiconductor substrates
JPS5515230A (en) Semiconductor device and its manufacturing method
JPS55153325A (en) Manufacture of semiconductor device
JPS54124687A (en) Production of semiconductor device
JPS5451383A (en) Production of semiconductor element
JPS57180144A (en) Manufacture of semiconductor device
JPS52129276A (en) Production of semiconductor device
JPS57173956A (en) Manufacture of semiconductor device
JPS54101663A (en) Aluminum diffusion method
JPS5515291A (en) Manufacturing method for semiconductor device
JPS54130877A (en) Production of semiconductor device
JPS5548950A (en) Manufacturing of semiconductor device
JPS571243A (en) Manufacture of semiconductor device
JPS5797629A (en) Manufacture of semiconductor device
JPS54139486A (en) Manufacture of semiconductor device
JPS54162982A (en) Manufacture of semiconductor device
JPS5587488A (en) Production of semiconductor device
JPS5568650A (en) Manufacturing method of semiconductor device
JPS5544773A (en) Producing method for insulative gate type semiconductor device
JPS5529179A (en) Semiconductor device
JPS5753957A (en) Manufacture of semiconductor device
JPS5477570A (en) Production of semiconductor element