JPS5484979A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5484979A JPS5484979A JP15324577A JP15324577A JPS5484979A JP S5484979 A JPS5484979 A JP S5484979A JP 15324577 A JP15324577 A JP 15324577A JP 15324577 A JP15324577 A JP 15324577A JP S5484979 A JPS5484979 A JP S5484979A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- pattern
- etching
- lattice defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To control acurately the depth of side etching to obtain a minute pattern by utilizing that the etching speed is high in a region where lattice defects are generated by ion injection.
CONSTITUTION: N-type epi-layer 22, Pt layer 23 and Si3N4 layer 24 are caused to adhere onto semi-insulation-property GaAs substrate 21 by lamination, and pattern 25 of a photo resistor film is formed on them. Next, He ions having prescribed energy are injected to reach Pt layer 23, and is caused to advance in the lateral direction by the distance of approximately 30 % of the injection depth, thereby generating lattice defects there. Thus, the part of film 24 with a prescribed distance from the edge of pattern 25 is converted to film 24' including lattice defects, and film 24' where the etching speed becomes high is etched and removed by using mixed acid of HF and NH4F. After that, Au-Ge alloy layer 26 and Mo layer 27 are laminated throughout the surface and are covered with a film, and pattern 25 as well as layers 26 and 27 above pattern 25 are removed, and the exposed part of layer 23 is removed by sputter etching. Next, the exposed part of layer 24 is also removed by chemical etching, thereby making a FET.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15324577A JPS5484979A (en) | 1977-12-20 | 1977-12-20 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15324577A JPS5484979A (en) | 1977-12-20 | 1977-12-20 | Production of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5484979A true JPS5484979A (en) | 1979-07-06 |
Family
ID=15558223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15324577A Pending JPS5484979A (en) | 1977-12-20 | 1977-12-20 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5484979A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927542A (en) * | 1982-08-06 | 1984-02-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
-
1977
- 1977-12-20 JP JP15324577A patent/JPS5484979A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5927542A (en) * | 1982-08-06 | 1984-02-14 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor device |
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