JPS5529179A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5529179A JPS5529179A JP10316178A JP10316178A JPS5529179A JP S5529179 A JPS5529179 A JP S5529179A JP 10316178 A JP10316178 A JP 10316178A JP 10316178 A JP10316178 A JP 10316178A JP S5529179 A JPS5529179 A JP S5529179A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- knock
- mask
- leakage current
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To reduce the leakage current of a device by employing a procedure that in forming an impurity ion injuction layer inside a semiconductor substrate by use of a selective mask, a surface layer which is knock-on by the mask and in which the impurity concentration increase is removed by etching.
CONSTITUTION: Impurity ions are injected into a Si substrate 1 by the use of a selective mask of SiO2, and then a stained layer of SiC and the like formed on the surface of an injection layer 3 is removed with a mixed boil solution of NH4OH, H2O2 and H2O. Then, a knock-on layer 4 formed at the same time is removed, but this removal is effected by slight etching utilizing a mixed solution of HF and HNO3 having a slow etching speed since the knock-on layer 4 is as thin as 100 to 300Å. In this way, the layer 4 is removed and at the same tine the thicknesses of masking layers 2 and 3 are slightly reduced. By so arranging, the leakage current of an element is markedly reduced in providing the element in the layer 3.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316178A JPS5529179A (en) | 1978-08-24 | 1978-08-24 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10316178A JPS5529179A (en) | 1978-08-24 | 1978-08-24 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5529179A true JPS5529179A (en) | 1980-03-01 |
Family
ID=14346771
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10316178A Pending JPS5529179A (en) | 1978-08-24 | 1978-08-24 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5529179A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014179528A (en) * | 2013-03-15 | 2014-09-25 | Mitsubishi Electric Corp | Semiconductor element manufacturing method |
-
1978
- 1978-08-24 JP JP10316178A patent/JPS5529179A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014179528A (en) * | 2013-03-15 | 2014-09-25 | Mitsubishi Electric Corp | Semiconductor element manufacturing method |
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