JPS5541770A - Zener diode - Google Patents

Zener diode

Info

Publication number
JPS5541770A
JPS5541770A JP11535378A JP11535378A JPS5541770A JP S5541770 A JPS5541770 A JP S5541770A JP 11535378 A JP11535378 A JP 11535378A JP 11535378 A JP11535378 A JP 11535378A JP S5541770 A JPS5541770 A JP S5541770A
Authority
JP
Japan
Prior art keywords
region
diffused
layer
resistacne
embeded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11535378A
Other languages
Japanese (ja)
Inventor
Giichi Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11535378A priority Critical patent/JPS5541770A/en
Publication of JPS5541770A publication Critical patent/JPS5541770A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To decrease operation resistace and increase thermal drift characteristics and noise characteristics by giving low resistacne to the direct-under-portion of the cathode region in the anode region of a zener-diode constitution.
CONSTITUTION: P+ embeded region 7 is diffused in a P+ or N+ semiconductor substrate 5, and N- layer 6 is epitaxially grown all over the surface. At the same time, the region 7 rises up into the layer 6 by the thermal treatment. Then, impurities are diffused from the surface of the layer 6. At first, a P-type anode region 9, which enters into the region 7, is formed, and N+ region 10 is provided within the region 9. A P-type cathode region 8, which deeply enters into the region 7, is diffused in the region 10, and a zener diode is constituted. Since the P+ embeded region 7 is additionaly provided, the resistance of the portion of the region 9 directly under the region 10 becomes low, and a current from a jucntion a' becomes easy to flow, thereby operation resistacne is greatly decreased.
COPYRIGHT: (C)1980,JPO&Japio
JP11535378A 1978-09-19 1978-09-19 Zener diode Pending JPS5541770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11535378A JPS5541770A (en) 1978-09-19 1978-09-19 Zener diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11535378A JPS5541770A (en) 1978-09-19 1978-09-19 Zener diode

Publications (1)

Publication Number Publication Date
JPS5541770A true JPS5541770A (en) 1980-03-24

Family

ID=14660417

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11535378A Pending JPS5541770A (en) 1978-09-19 1978-09-19 Zener diode

Country Status (1)

Country Link
JP (1) JPS5541770A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60249375A (en) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method
JPS6153782A (en) * 1984-08-23 1986-03-17 Sharp Corp Planar voltage regulation diode
US4652895A (en) * 1982-08-09 1987-03-24 Harris Corporation Zener structures with connections to buried layer
JPS62150783A (en) * 1985-12-24 1987-07-04 Rohm Co Ltd Zener diode device
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835865A (en) * 1971-09-03 1973-05-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835865A (en) * 1971-09-03 1973-05-26

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4652895A (en) * 1982-08-09 1987-03-24 Harris Corporation Zener structures with connections to buried layer
JPS60249375A (en) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method
JPS6153782A (en) * 1984-08-23 1986-03-17 Sharp Corp Planar voltage regulation diode
JPS62150783A (en) * 1985-12-24 1987-07-04 Rohm Co Ltd Zener diode device
JPS63184359A (en) * 1987-01-27 1988-07-29 Toshiba Corp Input protective circuit of semiconductor device
JPH0413865B2 (en) * 1987-01-27 1992-03-11 Tokyo Shibaura Electric Co

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