JPS5378181A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS5378181A
JPS5378181A JP15337376A JP15337376A JPS5378181A JP S5378181 A JPS5378181 A JP S5378181A JP 15337376 A JP15337376 A JP 15337376A JP 15337376 A JP15337376 A JP 15337376A JP S5378181 A JPS5378181 A JP S5378181A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
junction
impurity
easing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15337376A
Other languages
Japanese (ja)
Other versions
JPS6129554B2 (en
Inventor
Yoshiaki Kamigaki
Kiyoo Ito
Hiroo Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15337376A priority Critical patent/JPS5378181A/en
Publication of JPS5378181A publication Critical patent/JPS5378181A/en
Publication of JPS6129554B2 publication Critical patent/JPS6129554B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: For the easing of the impurity concentration gradient at a PN junction, the impurity of a large diffusion coefficient is diffused to the junction boundary surface at a low concentration to obtain the improved dielectric strength and stabilized element characteristics, thereby realizing its long life.
COPYRIGHT: (C)1978,JPO&Japio
JP15337376A 1976-12-22 1976-12-22 Semiconductor device and its manufacture Granted JPS5378181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15337376A JPS5378181A (en) 1976-12-22 1976-12-22 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15337376A JPS5378181A (en) 1976-12-22 1976-12-22 Semiconductor device and its manufacture

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP23491484A Division JPS60121771A (en) 1984-11-09 1984-11-09 Semiconductor device
JP11463687A Division JPS6323362A (en) 1987-05-13 1987-05-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5378181A true JPS5378181A (en) 1978-07-11
JPS6129554B2 JPS6129554B2 (en) 1986-07-07

Family

ID=15561028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15337376A Granted JPS5378181A (en) 1976-12-22 1976-12-22 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS5378181A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885526A (en) * 1981-11-17 1983-05-21 Sumitomo Electric Ind Ltd Doping method of impurities to semiconductor crystal
JPS58123723A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS60121771A (en) * 1984-11-09 1985-06-29 Hitachi Ltd Semiconductor device
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
US5045486A (en) * 1990-06-26 1991-09-03 At&T Bell Laboratories Transistor fabrication method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119980A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd ZETSUENGEETOGATADENKAIKOKATORANJISUTANO SEIZOHOHO

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119980A (en) * 1974-08-12 1976-02-17 Fujitsu Ltd ZETSUENGEETOGATADENKAIKOKATORANJISUTANO SEIZOHOHO

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5885526A (en) * 1981-11-17 1983-05-21 Sumitomo Electric Ind Ltd Doping method of impurities to semiconductor crystal
JPS58123723A (en) * 1982-01-19 1983-07-23 Sumitomo Electric Ind Ltd Impurity doping method onto semiconductor crystal
JPS60121771A (en) * 1984-11-09 1985-06-29 Hitachi Ltd Semiconductor device
US4878100A (en) * 1988-01-19 1989-10-31 Texas Instruments Incorporated Triple-implanted drain in transistor made by oxide sidewall-spacer method
US5045486A (en) * 1990-06-26 1991-09-03 At&T Bell Laboratories Transistor fabrication method

Also Published As

Publication number Publication date
JPS6129554B2 (en) 1986-07-07

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