JPS5367368A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5367368A JPS5367368A JP14215976A JP14215976A JPS5367368A JP S5367368 A JPS5367368 A JP S5367368A JP 14215976 A JP14215976 A JP 14215976A JP 14215976 A JP14215976 A JP 14215976A JP S5367368 A JPS5367368 A JP S5367368A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- dielectric strength
- junction
- prevented
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: The insulation puncture at the edge of a PN junction is prevented to improve its dielectric strength, so that the semiconductor device can be obtained which is easy to manufacture like a planar structure and has high reliability and whose dielectric strength is equivalent to that of a mesa type (bevel structure).
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14215976A JPS5367368A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14215976A JPS5367368A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5367368A true JPS5367368A (en) | 1978-06-15 |
Family
ID=15308725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14215976A Pending JPS5367368A (en) | 1976-11-29 | 1976-11-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5367368A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
US4661838A (en) * | 1985-10-24 | 1987-04-28 | General Electric Company | High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
US4835596A (en) * | 1980-08-04 | 1989-05-30 | Siemens Aktiengesellschaft | Transistor with a high collector-emitter breakthrough voltage |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
JP2017092472A (en) * | 2015-11-10 | 2017-05-25 | アナログ デバイシス グローバル | Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor |
-
1976
- 1976-11-29 JP JP14215976A patent/JPS5367368A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4835596A (en) * | 1980-08-04 | 1989-05-30 | Siemens Aktiengesellschaft | Transistor with a high collector-emitter breakthrough voltage |
US4485392A (en) * | 1981-12-28 | 1984-11-27 | North American Philips Corporation | Lateral junction field effect transistor device |
US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
US4942440A (en) * | 1982-10-25 | 1990-07-17 | General Electric Company | High voltage semiconductor devices with reduced on-resistance |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
US4661838A (en) * | 1985-10-24 | 1987-04-28 | General Electric Company | High voltage semiconductor devices electrically isolated from an integrated circuit substrate |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
JP2017092472A (en) * | 2015-11-10 | 2017-05-25 | アナログ デバイシス グローバル | Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor |
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