JPS5367368A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5367368A
JPS5367368A JP14215976A JP14215976A JPS5367368A JP S5367368 A JPS5367368 A JP S5367368A JP 14215976 A JP14215976 A JP 14215976A JP 14215976 A JP14215976 A JP 14215976A JP S5367368 A JPS5367368 A JP S5367368A
Authority
JP
Japan
Prior art keywords
semiconductor device
dielectric strength
junction
prevented
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14215976A
Other languages
Japanese (ja)
Inventor
Akiyasu Ishitani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14215976A priority Critical patent/JPS5367368A/en
Publication of JPS5367368A publication Critical patent/JPS5367368A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: The insulation puncture at the edge of a PN junction is prevented to improve its dielectric strength, so that the semiconductor device can be obtained which is easy to manufacture like a planar structure and has high reliability and whose dielectric strength is equivalent to that of a mesa type (bevel structure).
COPYRIGHT: (C)1978,JPO&Japio
JP14215976A 1976-11-29 1976-11-29 Semiconductor device Pending JPS5367368A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14215976A JPS5367368A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14215976A JPS5367368A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5367368A true JPS5367368A (en) 1978-06-15

Family

ID=15308725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14215976A Pending JPS5367368A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367368A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
US4835596A (en) * 1980-08-04 1989-05-30 Siemens Aktiengesellschaft Transistor with a high collector-emitter breakthrough voltage
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
JP2017092472A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835596A (en) * 1980-08-04 1989-05-30 Siemens Aktiengesellschaft Transistor with a high collector-emitter breakthrough voltage
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
US4942440A (en) * 1982-10-25 1990-07-17 General Electric Company High voltage semiconductor devices with reduced on-resistance
US4729008A (en) * 1982-12-08 1988-03-01 Harris Corporation High voltage IC bipolar transistors operable to BVCBO and method of fabrication
US4661838A (en) * 1985-10-24 1987-04-28 General Electric Company High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US4808547A (en) * 1986-07-07 1989-02-28 Harris Corporation Method of fabrication of high voltage IC bopolar transistors operable to BVCBO
JP2017092472A (en) * 2015-11-10 2017-05-25 アナログ デバイシス グローバル Combination of fet-bipolar transistor and switch with such combination of fie-bipolar transistor

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