JPS5384483A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5384483A JPS5384483A JP16024676A JP16024676A JPS5384483A JP S5384483 A JPS5384483 A JP S5384483A JP 16024676 A JP16024676 A JP 16024676A JP 16024676 A JP16024676 A JP 16024676A JP S5384483 A JPS5384483 A JP S5384483A
- Authority
- JP
- Japan
- Prior art keywords
- dielectric strength
- semiconductor device
- concaved
- curved
- ethed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To increase further the dielectric strength of a high dielectric strength transistor, by turning the base-collector junction surface down to use it as the concaved surface of a convexity and making cross the concaved surface the second mesa ethed curved surface at the curved side surface other than the flat surface of the concave surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16024676A JPS5384483A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16024676A JPS5384483A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5384483A true JPS5384483A (en) | 1978-07-25 |
Family
ID=15710848
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16024676A Pending JPS5384483A (en) | 1976-12-29 | 1976-12-29 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5384483A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
-
1976
- 1976-12-29 JP JP16024676A patent/JPS5384483A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4794093A (en) * | 1987-05-01 | 1988-12-27 | Raytheon Company | Selective backside plating of gaas monolithic microwave integrated circuits |
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